Mn redistribution in doped GaInAs
Publication
, Journal Article
Brown, AS; Wicks, GW; Eastman, LF
Published in: J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA)
1986
Summary for only given. The authors discuss some aspects of the diffusion behavior of Mn in the presence of electric fields. Impurity profiles were measured by using secondary ion mass spectrometry (SIMS). No matrix effects exist for Mn detection in either p- or n-type GaInAs, so the data were interpreted in a straightforward manner by comparison with ion-implanted standards
Duke Scholars
Published In
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA)
DOI
Publication Date
1986
Volume
4
Issue
2
Start / End Page
543 / 544
Location
Minneapolis, MN, USA
Citation
APA
Chicago
ICMJE
MLA
NLM
Brown, A. S., Wicks, G. W., & Eastman, L. F. (1986). Mn redistribution in doped GaInAs. J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), 4(2), 543–544. https://doi.org/10.1116/1.583424
Brown, A. S., G. W. Wicks, and L. F. Eastman. “Mn redistribution in doped GaInAs.” J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) 4, no. 2 (1986): 543–44. https://doi.org/10.1116/1.583424.
Brown AS, Wicks GW, Eastman LF. Mn redistribution in doped GaInAs. J Vac Sci Technol B, Microelectron Process Phenom (USA). 1986;4(2):543–4.
Brown, A. S., et al. “Mn redistribution in doped GaInAs.” J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 4, no. 2, 1986, pp. 543–44. Manual, doi:10.1116/1.583424.
Brown AS, Wicks GW, Eastman LF. Mn redistribution in doped GaInAs. J Vac Sci Technol B, Microelectron Process Phenom (USA). 1986;4(2):543–544.
Published In
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA)
DOI
Publication Date
1986
Volume
4
Issue
2
Start / End Page
543 / 544
Location
Minneapolis, MN, USA