20-GHz High-Efficiency AlInAs-GalnAs on InP Power HEMT
Publication
, Journal Article
Matloubian, M; Brown, AS; Nguyen, LD; Melendes, MA; Larson, LE; Delaney, MJ; Thompson, MA; Rhodes, RA; Pence, JE
Published in: IEEE Microwave and Guided Wave Letters
January 1, 1993
A single stage 20-GHz power amplifier was developed using double-doped AlInAs-GaInAs on InP HEMT. Output power of 516 mW (0.645 W/mm) with power-added efficiency of 47.1% with 7.1-dB gain were obtained from an 800-μ m wide device. The device had a saturated output power of more than 560 mW (0.7 W/mm). This is believed to be the highest combination of output power, power density, gain, and power-added efficiency reported for an InP-based FET at this frequency. © 1993 IEEE
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Published In
IEEE Microwave and Guided Wave Letters
DOI
ISSN
1051-8207
Publication Date
January 1, 1993
Volume
3
Issue
5
Start / End Page
142 / 144
Related Subject Headings
- Networking & Telecommunications
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics
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Matloubian, M., Brown, A. S., Nguyen, L. D., Melendes, M. A., Larson, L. E., Delaney, M. J., … Pence, J. E. (1993). 20-GHz High-Efficiency AlInAs-GalnAs on InP Power HEMT. IEEE Microwave and Guided Wave Letters, 3(5), 142–144. https://doi.org/10.1109/75.217211
Matloubian, M., A. S. Brown, L. D. Nguyen, M. A. Melendes, L. E. Larson, M. J. Delaney, M. A. Thompson, R. A. Rhodes, and J. E. Pence. “20-GHz High-Efficiency AlInAs-GalnAs on InP Power HEMT.” IEEE Microwave and Guided Wave Letters 3, no. 5 (January 1, 1993): 142–44. https://doi.org/10.1109/75.217211.
Matloubian M, Brown AS, Nguyen LD, Melendes MA, Larson LE, Delaney MJ, et al. 20-GHz High-Efficiency AlInAs-GalnAs on InP Power HEMT. IEEE Microwave and Guided Wave Letters. 1993 Jan 1;3(5):142–4.
Matloubian, M., et al. “20-GHz High-Efficiency AlInAs-GalnAs on InP Power HEMT.” IEEE Microwave and Guided Wave Letters, vol. 3, no. 5, Jan. 1993, pp. 142–44. Scopus, doi:10.1109/75.217211.
Matloubian M, Brown AS, Nguyen LD, Melendes MA, Larson LE, Delaney MJ, Thompson MA, Rhodes RA, Pence JE. 20-GHz High-Efficiency AlInAs-GalnAs on InP Power HEMT. IEEE Microwave and Guided Wave Letters. 1993 Jan 1;3(5):142–144.
Published In
IEEE Microwave and Guided Wave Letters
DOI
ISSN
1051-8207
Publication Date
January 1, 1993
Volume
3
Issue
5
Start / End Page
142 / 144
Related Subject Headings
- Networking & Telecommunications
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics