Scholars@Duke

High-Performance Submicrometer AlInAs-GalnAs HEMT's

Publication ,  Journal Article
Mishra, UK; Brown, AS; Jelloian, LM; Hackett, LH; Delaney, MJ
Published in: IEEE Electron Device Letters
January 1, 1988
Published version (DOI)

The performance of long (1.3μm) and short (0.3μm) gate-length Al 0.48 In 0.52 As-Gao 0.47 In 0.53 As high electron mobility transistors (HEMT's) is reported. Transconductances of 465 and 650 mS/mm, respectively, were achieved. The 0.3-μm-long gate-length device exhibited an ft > 80 GHz. These results are attributed to the excellent electronic properties of the AlInAs-GalnAs modulation-deoped system. © 1988 IEEE

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

IEEE Electron Device Letters

DOI

10.1109/55.20407

EISSN

1558-0563

ISSN

0741-3106

Publication Date

January 1, 1988

Volume

9

Issue

1

Start / End Page

41 / 43

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
 

Citation

APA
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ICMJE
MLA
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Mishra, U. K., Brown, A. S., Jelloian, L. M., Hackett, L. H., & Delaney, M. J. (1988). High-Performance Submicrometer AlInAs-GalnAs HEMT's. IEEE Electron Device Letters, 9(1), 41–43. https://doi.org/10.1109/55.20407
Mishra, U. K., A. S. Brown, L. M. Jelloian, L. H. Hackett, and M. J. Delaney. “High-Performance Submicrometer AlInAs-GalnAs HEMT's.” IEEE Electron Device Letters 9, no. 1 (January 1, 1988): 41–43. https://doi.org/10.1109/55.20407.
Mishra UK, Brown AS, Jelloian LM, Hackett LH, Delaney MJ. High-Performance Submicrometer AlInAs-GalnAs HEMT's. IEEE Electron Device Letters. 1988 Jan 1;9(1):41–3.
Mishra, U. K., et al. “High-Performance Submicrometer AlInAs-GalnAs HEMT's.” IEEE Electron Device Letters, vol. 9, no. 1, Jan. 1988, pp. 41–43. Scopus, doi:10.1109/55.20407.
Mishra UK, Brown AS, Jelloian LM, Hackett LH, Delaney MJ. High-Performance Submicrometer AlInAs-GalnAs HEMT's. IEEE Electron Device Letters. 1988 Jan 1;9(1):41–43.

Published In

IEEE Electron Device Letters

DOI

10.1109/55.20407

EISSN

1558-0563

ISSN

0741-3106

Publication Date

January 1, 1988

Volume

9

Issue

1

Start / End Page

41 / 43

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering