Interplay between GaN polarity and surface reactivity towards atomic hydrogen

The polarity of GaN epitaxial films and its impact on the interaction of GaN surfaces with atomic hydrogen were discussed. GaN epilayers were grown by radio frequency plasma molecular beam epitaxy (MBE) with both GaN and AlN buffer layers. It was found that a different reaction rate exists for N- and Ga-polar GaN with atomic hydrogen, with N-polar GaN exhibiting greater reactivity. The results show that Ga-polar GaN results from the use of AlN buffer layers on sapphire when nitrided.

Duke Scholars

Author April S. Brown Electrical and Computer Engineering