Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length
Publication
, Journal Article
Mishra, UK; Brown, AS; Jelloian, LM; Thompson, M; Rosenbaum, SE; Nguyen, LD; Solomon, PM; Kiehl, R; Kwark, YH
Published in: Proceedings of SPIE - The International Society for Optical Engineering
December 1, 1990
A novel self-aligned technique for 0.15μm gate length AlInAs-GaInAs HEMTs has been demonstrated. Devices with an oxide sidewall yielded an fT of 177 GHz whereas devices with no sidewall exhibited an fT greater than 250 GHz. The difference has been related to process damage during plasma deposition of SiO2. An extrinsic fT of 292 GHz was measured at 77K.
Duke Scholars
Published In
Proceedings of SPIE - The International Society for Optical Engineering
ISSN
0277-786X
Publication Date
December 1, 1990
Volume
1288
Start / End Page
21 / 29
Related Subject Headings
- 5102 Atomic, molecular and optical physics
- 4009 Electronics, sensors and digital hardware
- 4006 Communications engineering
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APA
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MLA
NLM
Mishra, U. K., Brown, A. S., Jelloian, L. M., Thompson, M., Rosenbaum, S. E., Nguyen, L. D., … Kwark, Y. H. (1990). Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length. Proceedings of SPIE - The International Society for Optical Engineering, 1288, 21–29.
Mishra, U. K., A. S. Brown, L. M. Jelloian, M. Thompson, S. E. Rosenbaum, L. D. Nguyen, P. M. Solomon, R. Kiehl, and Y. H. Kwark. “Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length.” Proceedings of SPIE - The International Society for Optical Engineering 1288 (December 1, 1990): 21–29.
Mishra UK, Brown AS, Jelloian LM, Thompson M, Rosenbaum SE, Nguyen LD, et al. Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length. Proceedings of SPIE - The International Society for Optical Engineering. 1990 Dec 1;1288:21–9.
Mishra, U. K., et al. “Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length.” Proceedings of SPIE - The International Society for Optical Engineering, vol. 1288, Dec. 1990, pp. 21–29.
Mishra UK, Brown AS, Jelloian LM, Thompson M, Rosenbaum SE, Nguyen LD, Solomon PM, Kiehl R, Kwark YH. Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length. Proceedings of SPIE - The International Society for Optical Engineering. 1990 Dec 1;1288:21–29.
Published In
Proceedings of SPIE - The International Society for Optical Engineering
ISSN
0277-786X
Publication Date
December 1, 1990
Volume
1288
Start / End Page
21 / 29
Related Subject Headings
- 5102 Atomic, molecular and optical physics
- 4009 Electronics, sensors and digital hardware
- 4006 Communications engineering