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650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistors

Publication ,  Journal Article
Nguyen, LD; Brown, AS; Thompson, MA; Jelloian, LM; Larson, LE; Matloubian, M
Published in: IEEE Electron Device Letters
1992
Published version (DOI) Link to item

The authors report on the design and fabrication of a 650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistor (HEMT) with a state-of-the-art current gain cutoff frequency of over 300 GHz. This work clearly demonstrates the potential of sub-0.1-μm gate-length HEMTs for near-future microwave and millimeter-wave applications.

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

IEEE Electron Device Letters

DOI

10.1109/55.144991

Publication Date

1992

Volume

13

Issue

3

Start / End Page

143 / 145

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
 

Citation

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MLA
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Nguyen, L. D., Brown, A. S., Thompson, M. A., Jelloian, L. M., Larson, L. E., & Matloubian, M. (1992). 650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistors. IEEE Electron Device Letters, 13(3), 143–145. https://doi.org/10.1109/55.144991
Nguyen, Loi D., April S. Brown, Mark A. Thompson, Linda M. Jelloian, Larry E. Larson, and Mehran Matloubian. “650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistors.” IEEE Electron Device Letters 13, no. 3 (1992): 143–45. https://doi.org/10.1109/55.144991.
Nguyen LD, Brown AS, Thompson MA, Jelloian LM, Larson LE, Matloubian M. 650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistors. IEEE Electron Device Letters. 1992;13(3):143–5.
Nguyen, Loi D., et al. “650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistors.” IEEE Electron Device Letters, vol. 13, no. 3, 1992, pp. 143–45. Manual, doi:10.1109/55.144991.
Nguyen LD, Brown AS, Thompson MA, Jelloian LM, Larson LE, Matloubian M. 650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistors. IEEE Electron Device Letters. 1992;13(3):143–145.

Published In

IEEE Electron Device Letters

DOI

10.1109/55.144991

Publication Date

1992

Volume

13

Issue

3

Start / End Page

143 / 145

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering