Structural and electrical properties of low temperature GaInAs

GaInAs lattice matched to InP was grown by molecular-beam epitaxy over a temperature range of 100-450°C and characterized by X-ray diffraction, resistivity, and secondary ion mass spectroscopy, X-ray diffraction analysis indicated the incorporation of excess As for samples grown below 250°C. As-grown GaInAs was n-type with electrical concentration increasing with decreasing growth temperature, ranging from 5×1014 cm-3 (450°C) to 1.8×1017 (150°C). Secondary ion mass spectroscopy indicated that this behavior was not due to the incorporation of background n-type dopants. Be- and Si-doped GaInAs at 5×1018 cm-3 showed full electrical activation for growth temperatures down to 260°C, with only partial activation for Si and no activation for Be for growth temperatures below 260°C

Duke Scholars

Author April S. Brown Electrical and Computer Engineering