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IIIB-3 InP-Based Inverted High Electron Mobility Transistors

Publication ,  Journal Article
Schmitz, AE; Nguyen, LD; Brown, AS; Metzger, RA
Published in: IEEE Transactions on Electron Devices
January 1, 1991
Published version (DOI)

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

IEEE Transactions on Electron Devices

DOI

10.1109/16.158723

EISSN

1557-9646

ISSN

0018-9383

Publication Date

January 1, 1991

Volume

38

Issue

12

Start / End Page

2702

Related Subject Headings

  • Applied Physics
  • 0906 Electrical and Electronic Engineering
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Schmitz, A. E., Nguyen, L. D., Brown, A. S., & Metzger, R. A. (1991). IIIB-3 InP-Based Inverted High Electron Mobility Transistors. IEEE Transactions on Electron Devices, 38(12), 2702. https://doi.org/10.1109/16.158723
Schmitz, A. E., L. D. Nguyen, A. S. Brown, and R. A. Metzger. “IIIB-3 InP-Based Inverted High Electron Mobility Transistors.” IEEE Transactions on Electron Devices 38, no. 12 (January 1, 1991): 2702. https://doi.org/10.1109/16.158723.
Schmitz AE, Nguyen LD, Brown AS, Metzger RA. IIIB-3 InP-Based Inverted High Electron Mobility Transistors. IEEE Transactions on Electron Devices. 1991 Jan 1;38(12):2702.
Schmitz, A. E., et al. “IIIB-3 InP-Based Inverted High Electron Mobility Transistors.” IEEE Transactions on Electron Devices, vol. 38, no. 12, Jan. 1991, p. 2702. Scopus, doi:10.1109/16.158723.
Schmitz AE, Nguyen LD, Brown AS, Metzger RA. IIIB-3 InP-Based Inverted High Electron Mobility Transistors. IEEE Transactions on Electron Devices. 1991 Jan 1;38(12):2702.

Published In

IEEE Transactions on Electron Devices

DOI

10.1109/16.158723

EISSN

1557-9646

ISSN

0018-9383

Publication Date

January 1, 1991

Volume

38

Issue

12

Start / End Page

2702

Related Subject Headings

  • Applied Physics
  • 0906 Electrical and Electronic Engineering