Skip to main content

Low-Temperature Buffer GaAs MESFET Technology for High-Speed Integrated Circuit Applications

Publication ,  Journal Article
Delaney, MJ; Chou, CS; Larson, LE; Jensen, JF; Deakin, DS; Brown, AS; Hooper, WW; Thompson, MA; McCRAY, LG; Rosenbaum, SE
Published in: IEEE Electron Device Letters
January 1, 1989

High-performance digital integrated circuits have been fabricated with low-temperature buffer (LTB) GaAs MESFET technology. Individual 0.2-µm gate length transistors have a gmof 600 mS/mm and an extrapolated fTof 80 GHz. Backgating and light sensitivity are eliminated with the LTB technology. Static SCFL frequency dividers exhibit a maximum clock rate of 22 GHz. © 1989 IEEE

Duke Scholars

Altmetric Attention Stats
Dimensions Citation Stats

Published In

IEEE Electron Device Letters

DOI

EISSN

1558-0563

ISSN

0741-3106

Publication Date

January 1, 1989

Volume

10

Issue

8

Start / End Page

355 / 357

Related Subject Headings

  • Applied Physics
  • 0906 Electrical and Electronic Engineering
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Delaney, M. J., Chou, C. S., Larson, L. E., Jensen, J. F., Deakin, D. S., Brown, A. S., … Rosenbaum, S. E. (1989). Low-Temperature Buffer GaAs MESFET Technology for High-Speed Integrated Circuit Applications. IEEE Electron Device Letters, 10(8), 355–357. https://doi.org/10.1109/55.31755
Delaney, M. J., C. S. Chou, L. E. Larson, J. F. Jensen, D. S. Deakin, A. S. Brown, W. W. Hooper, M. A. Thompson, L. G. McCRAY, and S. E. Rosenbaum. “Low-Temperature Buffer GaAs MESFET Technology for High-Speed Integrated Circuit Applications.” IEEE Electron Device Letters 10, no. 8 (January 1, 1989): 355–57. https://doi.org/10.1109/55.31755.
Delaney MJ, Chou CS, Larson LE, Jensen JF, Deakin DS, Brown AS, et al. Low-Temperature Buffer GaAs MESFET Technology for High-Speed Integrated Circuit Applications. IEEE Electron Device Letters. 1989 Jan 1;10(8):355–7.
Delaney, M. J., et al. “Low-Temperature Buffer GaAs MESFET Technology for High-Speed Integrated Circuit Applications.” IEEE Electron Device Letters, vol. 10, no. 8, Jan. 1989, pp. 355–57. Scopus, doi:10.1109/55.31755.
Delaney MJ, Chou CS, Larson LE, Jensen JF, Deakin DS, Brown AS, Hooper WW, Thompson MA, McCRAY LG, Rosenbaum SE. Low-Temperature Buffer GaAs MESFET Technology for High-Speed Integrated Circuit Applications. IEEE Electron Device Letters. 1989 Jan 1;10(8):355–357.

Published In

IEEE Electron Device Letters

DOI

EISSN

1558-0563

ISSN

0741-3106

Publication Date

January 1, 1989

Volume

10

Issue

8

Start / End Page

355 / 357

Related Subject Headings

  • Applied Physics
  • 0906 Electrical and Electronic Engineering