Low-Temperature Buffer GaAs MESFET Technology for High-Speed Integrated Circuit Applications
Publication
, Journal Article
Delaney, MJ; Chou, CS; Larson, LE; Jensen, JF; Deakin, DS; Brown, AS; Hooper, WW; Thompson, MA; McCRAY, LG; Rosenbaum, SE
Published in: IEEE Electron Device Letters
January 1, 1989
High-performance digital integrated circuits have been fabricated with low-temperature buffer (LTB) GaAs MESFET technology. Individual 0.2-µm gate length transistors have a gmof 600 mS/mm and an extrapolated fTof 80 GHz. Backgating and light sensitivity are eliminated with the LTB technology. Static SCFL frequency dividers exhibit a maximum clock rate of 22 GHz. © 1989 IEEE
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Published In
IEEE Electron Device Letters
DOI
EISSN
1558-0563
ISSN
0741-3106
Publication Date
January 1, 1989
Volume
10
Issue
8
Start / End Page
355 / 357
Related Subject Headings
- Applied Physics
- 0906 Electrical and Electronic Engineering
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Delaney, M. J., Chou, C. S., Larson, L. E., Jensen, J. F., Deakin, D. S., Brown, A. S., … Rosenbaum, S. E. (1989). Low-Temperature Buffer GaAs MESFET Technology for High-Speed Integrated Circuit Applications. IEEE Electron Device Letters, 10(8), 355–357. https://doi.org/10.1109/55.31755
Delaney, M. J., C. S. Chou, L. E. Larson, J. F. Jensen, D. S. Deakin, A. S. Brown, W. W. Hooper, M. A. Thompson, L. G. McCRAY, and S. E. Rosenbaum. “Low-Temperature Buffer GaAs MESFET Technology for High-Speed Integrated Circuit Applications.” IEEE Electron Device Letters 10, no. 8 (January 1, 1989): 355–57. https://doi.org/10.1109/55.31755.
Delaney MJ, Chou CS, Larson LE, Jensen JF, Deakin DS, Brown AS, et al. Low-Temperature Buffer GaAs MESFET Technology for High-Speed Integrated Circuit Applications. IEEE Electron Device Letters. 1989 Jan 1;10(8):355–7.
Delaney, M. J., et al. “Low-Temperature Buffer GaAs MESFET Technology for High-Speed Integrated Circuit Applications.” IEEE Electron Device Letters, vol. 10, no. 8, Jan. 1989, pp. 355–57. Scopus, doi:10.1109/55.31755.
Delaney MJ, Chou CS, Larson LE, Jensen JF, Deakin DS, Brown AS, Hooper WW, Thompson MA, McCRAY LG, Rosenbaum SE. Low-Temperature Buffer GaAs MESFET Technology for High-Speed Integrated Circuit Applications. IEEE Electron Device Letters. 1989 Jan 1;10(8):355–357.
Published In
IEEE Electron Device Letters
DOI
EISSN
1558-0563
ISSN
0741-3106
Publication Date
January 1, 1989
Volume
10
Issue
8
Start / End Page
355 / 357
Related Subject Headings
- Applied Physics
- 0906 Electrical and Electronic Engineering