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Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy

Publication ,  Journal Article
Namkoong, G; Doolittle, WA; Brown, AS; Losurdo, M; Capezzuto, P; Bruno, G
Published in: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
May 1, 2002

The effects of sapphire nitridation temperature on the properties of GaN grown by radiofrequency (rf) plasma assisted molecular-beam epitaxy (MBE) were discussed. It was found that the optical and structural characteristics of GaN epitaxial layers were dramatically improved at a nitridation temperatutre of 200 °C. The analysis showed that the nitridation temperature was a crucial parameter in improvement of the optical and structural quality of GaN epitaxial layers.

Duke Scholars

Published In

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

DOI

ISSN

1071-1023

Publication Date

May 1, 2002

Volume

20

Issue

3

Start / End Page

1221 / 1228

Related Subject Headings

  • Applied Physics
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences
 

Citation

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ICMJE
MLA
NLM
Namkoong, G., Doolittle, W. A., Brown, A. S., Losurdo, M., Capezzuto, P., & Bruno, G. (2002). Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(3), 1221–1228. https://doi.org/10.1116/1.1470514
Namkoong, G., W. A. Doolittle, A. S. Brown, M. Losurdo, P. Capezzuto, and G. Bruno. “Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20, no. 3 (May 1, 2002): 1221–28. https://doi.org/10.1116/1.1470514.
Namkoong G, Doolittle WA, Brown AS, Losurdo M, Capezzuto P, Bruno G. Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2002 May 1;20(3):1221–8.
Namkoong, G., et al. “Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 20, no. 3, May 2002, pp. 1221–28. Scopus, doi:10.1116/1.1470514.
Namkoong G, Doolittle WA, Brown AS, Losurdo M, Capezzuto P, Bruno G. Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2002 May 1;20(3):1221–1228.

Published In

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

DOI

ISSN

1071-1023

Publication Date

May 1, 2002

Volume

20

Issue

3

Start / End Page

1221 / 1228

Related Subject Headings

  • Applied Physics
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences