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Photoluminescence broadening mechanisms in high quality GaInAs-AlInAs quantum well structures

Publication ,  Journal Article
Brown, AS; Henige, JA; Delaney, MJ
Published in: Applied Physics Letters
December 1, 1988
Published version (DOI)

GaInAs-AlInAs quantum well structures have been analyzed by low-temperature photoluminescence. The photoluminescence linewidth (full width at half-maximum) of thicker quantum wells (>10 nm) grown directly on AlInAs buffer layers shows that an inverse relationship exists between interface quality and AlInAs alloy quality in agreement with the theoretical analysis of J. Singh, S. Dudley, B. Davies, and K. K. Bajaj [J. Appl. Phys. 60, 3167 (1986)]. Thinner wells show much improved luminescence properties due to a growth of previous wells.

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

Applied Physics Letters

DOI

10.1063/1.99185

ISSN

0003-6951

Publication Date

December 1, 1988

Volume

52

Issue

14

Start / End Page

1142 / 1143

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Brown, A. S., Henige, J. A., & Delaney, M. J. (1988). Photoluminescence broadening mechanisms in high quality GaInAs-AlInAs quantum well structures. Applied Physics Letters, 52(14), 1142–1143. https://doi.org/10.1063/1.99185
Brown, A. S., J. A. Henige, and M. J. Delaney. “Photoluminescence broadening mechanisms in high quality GaInAs-AlInAs quantum well structures.” Applied Physics Letters 52, no. 14 (December 1, 1988): 1142–43. https://doi.org/10.1063/1.99185.
Brown AS, Henige JA, Delaney MJ. Photoluminescence broadening mechanisms in high quality GaInAs-AlInAs quantum well structures. Applied Physics Letters. 1988 Dec 1;52(14):1142–3.
Brown, A. S., et al. “Photoluminescence broadening mechanisms in high quality GaInAs-AlInAs quantum well structures.” Applied Physics Letters, vol. 52, no. 14, Dec. 1988, pp. 1142–43. Scopus, doi:10.1063/1.99185.
Brown AS, Henige JA, Delaney MJ. Photoluminescence broadening mechanisms in high quality GaInAs-AlInAs quantum well structures. Applied Physics Letters. 1988 Dec 1;52(14):1142–1143.

Published In

Applied Physics Letters

DOI

10.1063/1.99185

ISSN

0003-6951

Publication Date

December 1, 1988

Volume

52

Issue

14

Start / End Page

1142 / 1143

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences