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HIGH PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMT'S.

Publication ,  Journal Article
Mishra, UK; Brown, AS; Jelloian, LM; Hackett, LH; Delaney, MJ
Published in: IEEE Transactions on Electron Devices
1987

The performance of long-gate and short-gate Al//0//. //4//8In//0//. //5//2As-Ga//0//. //4//7In//0//. //5//3As HEMTs fabricated on high-quality MBE (molecular-beam-epitaxially)-grown material is discussed. The device structures were grown lattice-matched to semi-insulating InP substrates. The typical layer consisted of an AlInAs buffer, followed by an undoped GaInAs channel, a thin undoped AlInAs space, a doped AlInAs donor layer, an undoped AlInAs barrier layer, followed finally by an n** plus GaInAs cap layer. The two epitaxial layer designs (wafers A & B) investigated to date differed only in the GaInAs channel thickness, 80 nm for wafer A and 40 nm for wafer B. Devices with 1. 3- mu m gate length were fabricated on both wafers. Transconductances of over 465 mS/mm at 300 K were measured on several devices on both wafers. There was no strong correlation between the channel thickness and the I-V characteristics. Devices with approximately 0. 30- mu m gate length were fabricated on wafer A. They exhibited transconductances of over 650 mS/mm at room temperature. The maximum drain current density was approimately 600 mA/mm which is twice the current density obtainable from single heterojunction AlGaAs-GaAs devices. This predicts a high fan-out capability for AlInAs-GaInAs HEMTs.

Duke Scholars

Published In

IEEE Transactions on Electron Devices

Publication Date

1987

Volume

ED-34

Issue

11

Start / End Page

4

Related Subject Headings

  • Applied Physics
  • 0906 Electrical and Electronic Engineering
 

Citation

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Mishra, U. K., Brown, A. S., Jelloian, L. M., Hackett, L. H., & Delaney, M. J. (1987). HIGH PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMT'S. IEEE Transactions on Electron Devices, ED-34(11), 4.
Mishra, U. K., A. S. Brown, L. M. Jelloian, L. H. Hackett, and M. J. Delaney. “HIGH PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMT'S.IEEE Transactions on Electron Devices ED-34, no. 11 (1987): 4.
Mishra UK, Brown AS, Jelloian LM, Hackett LH, Delaney MJ. HIGH PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMT'S. IEEE Transactions on Electron Devices. 1987;ED-34(11):4.
Mishra, U. K., et al. “HIGH PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMT'S.IEEE Transactions on Electron Devices, vol. ED-34, no. 11, 1987, p. 4.
Mishra UK, Brown AS, Jelloian LM, Hackett LH, Delaney MJ. HIGH PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMT'S. IEEE Transactions on Electron Devices. 1987;ED-34(11):4.

Published In

IEEE Transactions on Electron Devices

Publication Date

1987

Volume

ED-34

Issue

11

Start / End Page

4

Related Subject Headings

  • Applied Physics
  • 0906 Electrical and Electronic Engineering