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New properties and applications of electron-beam evaporated silicon in submicron elevated source/drain metal-oxide-semiconductor field-effect transistors

Publication ,  Journal Article
Mirabedini, MR; Goodwin-Johansson, SH; Massoud, HZ
Published in: Applied Physics Letters
December 1, 1994

We report the porous nature of electron-beam evaporated silicon on the sidewalls of metal-oxide-semiconductor field-effect transistor (MOSFET) gate spacers. This property was used to develop and fabricate submicron elevated source/drain MOSFETs with 200-500 Å ultrashallow junctions. Using electron-beam evaporated silicon reduces fabrication complexity, overcomes common problems inherent to elevated source/drain MOSFETs, and yields a self-aligned process.

Duke Scholars

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

December 1, 1994

Volume

65

Issue

6

Start / End Page

728 / 730

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Mirabedini, M. R., Goodwin-Johansson, S. H., & Massoud, H. Z. (1994). New properties and applications of electron-beam evaporated silicon in submicron elevated source/drain metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 65(6), 728–730. https://doi.org/10.1063/1.113014
Mirabedini, M. R., S. H. Goodwin-Johansson, and H. Z. Massoud. “New properties and applications of electron-beam evaporated silicon in submicron elevated source/drain metal-oxide-semiconductor field-effect transistors.” Applied Physics Letters 65, no. 6 (December 1, 1994): 728–30. https://doi.org/10.1063/1.113014.
Mirabedini MR, Goodwin-Johansson SH, Massoud HZ. New properties and applications of electron-beam evaporated silicon in submicron elevated source/drain metal-oxide-semiconductor field-effect transistors. Applied Physics Letters. 1994 Dec 1;65(6):728–30.
Mirabedini, M. R., et al. “New properties and applications of electron-beam evaporated silicon in submicron elevated source/drain metal-oxide-semiconductor field-effect transistors.” Applied Physics Letters, vol. 65, no. 6, Dec. 1994, pp. 728–30. Scopus, doi:10.1063/1.113014.
Mirabedini MR, Goodwin-Johansson SH, Massoud HZ. New properties and applications of electron-beam evaporated silicon in submicron elevated source/drain metal-oxide-semiconductor field-effect transistors. Applied Physics Letters. 1994 Dec 1;65(6):728–730.

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

December 1, 1994

Volume

65

Issue

6

Start / End Page

728 / 730

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences