Hisham Z. Massoud | Scholars@Duke

Hisham Z. Massoud
Professor of Electrical and Computer Engineering

Hisham Z. Massoud joined the Duke ECE Department in 1983, where is now a Professor. He is the founding director of the Semiconductor Research Laboratory. Professor Massoud has been a research scientist at the IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y., in 1977 and 1980-81, the Microelectronics Center of North Carolina in 1987, the Hewlett-Packard Integrated Circuits Business Division in 1992, and the Max-Planck Institute for Microstructure Physics in 1997 and 1998. He was a visiting professor of ECE at King Abdullah University of Science and Technology (KAUST) in Saudi Arabia in 2012. He is a Life Fellow of the Institute of Electrical and Electronics Engineers and Lifetime Fellow of the Electrochemical Society. He was awarded the 2006 Electronics and Photonics Division Award of the Electrochemical Society (ECS) for his work on ultrathin MOS gate dielectric films.

Current Appointments & Affiliations

Professor of Electrical and Computer Engineering, Electrical and Computer Engineering, Pratt School of Engineering 1999

Contact Information

Box 90291, Dept Of Elec And Comp Eng, Durham, NC 27708-0291
CIEMAS Building, Room 3521, Dept Of Elec And Comp Eng, Durham, NC 27708-0291
massoud@ee.duke.edu (919) 660-5257

Background
Education, Training, & Certifications
- Ph.D., Stanford University 1983
- M.S., Stanford University 1976
- M.S., Cairo University (Egypt) 1975
- B.S., Cairo University (Egypt) 1973
Duke Appointment History
- Chair, Department of Electrical and Computer Engineering, Electrical and Computer Engineering, Pratt School of Engineering 2006 - 2007
- Interim Chair, Department of Electrical and Computer Engineering, Electrical and Computer Engineering, Pratt School of Engineering 2001 - 2002
- Associate Professor with Tenure, Electrical and Computer Engineering, Pratt School of Engineering 1989 - 1999
- Associate Professor, Biomedical Engineering, Pratt School of Engineering 1993 - 1995
- Associate Professor, Electrical and Computer Engineering, Pratt School of Engineering 1986 - 1989
- Assistant Professor, Electrical and Computer Engineering, Pratt School of Engineering 1983 - 1986
Recognition
Awards & Honors
Expertise
Global Scholarship
- Research
  - Saudi Arabia (Country)
- Teaching
  - Saudi Arabia (Country)
Research
Selected Grants
- The (Final) Rewrite of the Electronics Curriculum awarded by Lord Foundation of North Carolina 2002 - 2005
- (97-0951) The Introduction of Animation in the Teaching of Solid-State Electronics awarded by Lord Foundation of North Carolina 1997 - 1998
- (95-0059) Cell Shape and Growth Regulation by Micro-patterned Surfaces awarded by National Science Foundation 1995 - 1998
- (93-0821) Photoelectric Investigation of the Processing Dependence of the Effective Contact Potential Difference in MOS awarded by US-Polish Joint Commission 1994 - 1997
- (93-0772) Micro-Electro-Mechanical Cell Probers for Research in Microbiology and Medicine awarded by Lord Foundation of North Carolina 1993
- (88-0027) The Properties of Silicon Dioxide Layers Grown Using Rapid Thermal Oxidation of Silicon in Radiation Environme awarded by Office of Naval Research 1987 - 1988
Publications & Artistic Works
Selected Publications
- Academic Articles
  - Ybarra, GA, Collins, LM, Huettel, LG, Coonley, KD, Massoud, HZ, Board, JA, Cummer, SA, Choudhury, RR, Gustafson, MR, Jokerst, NM, Brooke, MA, Willett, RM, Kim, J, and Absher, MS. "Integrated sensing and information processing theme-based redesign of the undergraduate electrical and computer engineering curriculum at Duke University." Advances in Engineering Education 2, no. 4 (2010).
  - Coonley, K, Brooke, M, Ethier, P, and Massoud, H. "Design of a flexible RF data link and associated laboratory curriculum in a first analog electronics and devices course." ASEE Annual Conference and Exposition, Conference Proceedings (2009).
  - Oliver, LD, Chakrabarty, K, and Massoud, HZ. "Dual-threshold pass-transistor logic design." Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI (2009): 291-296. Full Text
  - Cheng, C, Lee, J-H, Massoud, HZ, and Liu, QH. "3-D self-consistent Schrödinger-Poisson solver: The spectral element method." Journal of Computational Electronics 7, no. 3 (2008): 337-341. Full Text
  - Cheng, C, Lee, J-H, Lim, KH, Massoud, HZ, and Liu, QH. "3-D Quantum Transport Solver Based on the Perfectly Matched Layer and Spectral Element Methods for the Simulation of Semiconductor Nanodevices." J Comput Phys 227, no. 1 (November 10, 2007): 455-471. Full Text Link to Item
  - Cheng, C, Lee, J, Lim, KH, Massoud, HZ, and Liu, QH. "Solution of the 3-D schrödinger equation with tensor effective mass based on perfectly matched layer and spectral element methods." Proceedings of SPIE - The International Society for Optical Engineering 6468 (2007). Full Text
  - Massoud, HZ, and Jr, ETP. "Growth kinetics and electrical properties of ultrathin silicon-dioxide layers." ECS Transactions 2, no. 2 (2006): 189-203.
  - Oliver, LD, Chakrabarty, K, and Massoud, HZ. "An evaluation of the impact of gate oxide tunneling on dual-V _t-based leakage reduction techniques." Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI 2006 (2006): 105-110.
  - Massoud, HZ, Stathis, JH, Hattori, T, Misra, D, and Baumvol, I. "ECS Transactions: Preface." ECS Transactions 1, no. 1 (2005): iii-iv.
  - Shen, MYC, Jopling, J, and Massoud, HZ. "On the effects of carrier tunneling on the capacitance-voltage characteristics of ultrathin-oxide MOSFETs." ECS Transactions 1, no. 1 (2005): 283-294.
  - Cheng, C, Liu, QH, Lee, J-H, and Massoud, HZ. "Spectral element method for the Schrödinger-Poisson system." Journal of Computational Electronics 3, no. 3-4 (2004): 417-421. Full Text
  - Cheng, C, Liu, QH, and Massoud, HZ. "Spectral element method for the schrödinger-poisson system." 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts (2004): 221-222.
  - Liu, QH, Cheng, C, and Massoud, HZ. "The spectral grid method: A novel fast Schrödinger-equation solver for semiconductor nanodevice simulation." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 23, no. 8 (2004): 1200-1208. Full Text
  - Przewlocki, HM, Kudla, A, Brzezinska, D, Borowicz, L, Sawicki, Z, and Massoud, HZ. "The lateral distribution of the effective contact potential difference over the gate area of MOS structures." Electron Technology 35 (2004).
  - Przewlocki, HM, Kudla, A, Brzezinska, D, and Massoud, HZ. "Distribution of the contact-potential difference local values over the gate area of MOS structures." Microelectronic Engineering 72, no. 1-4 (2004): 165-173. Full Text
  - Przewlocki, HM, and Massoud, HZ. "Effects of stress annealing in nitrogen on the effective contact-potential difference, charges, and traps at the Si/SiO2 interface of metal-oxide-semiconductor devices." JOURNAL OF APPLIED PHYSICS 92, no. 4 (August 15, 2002): 2198-2201. Full Text Link to Item
  - Massoud, HZ, and Przewlocki, HM. "Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal-oxide-semiconductor devices." Journal of Applied Physics 92, no. 4 (2002): 2202-2206. Full Text
  - Przewlocki, HM, and Massoud, HZ. "Effects of stress annealing in nitrogen on the effective contact-potential difference, charges, and traps at the Si/SiO ₂ interface of metal-oxide-semiconductor devices." Journal of Applied Physics 92, no. 4 (2002): 2198-2201. Full Text
  - Massoud, HZ, Shiely, JP, and Shanware, A. "Self-consistent mosfet tunneling simulations-trends in the gate and substrate currents and the drain-current turnaround effect with oxide scaling." Materials Research Society Symposium - Proceedings 567 (1999): 227-239.
  - Shanware, A, Massoud, HZ, Acker, A, Li, VZ-Q, Mirabedini, MR, Henson, K, Hauser, JR, and Wortman, JJ. "Effects of Ge content in poly-Si_1-xGe_x gate material on the tunneling barrier in PMOS devices." Microelectronic Engineering 48, no. 1 (1999): 39-42. Full Text
  - Shanware, A, Massoud, HZ, Acker, A, Li, VZQ, Mirabedini, MR, Henson, K, Hauser, JR, and Wortman, JJ. "Modeling the dependence of the gate current on Ge content in ultrathin gate dielectric PMOS devices with POLY-Si1Gex gate material." Materials Research Society Symposium - Proceedings 567 (1999): 127-133.
  - Shanware, A, Massoud, HZ, Vogel, E, Henson, K, Hauser, JR, and Wortman, JJ. "Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO₂ and SiO₂/Ta₂O₅ dielectrics with oxide scaling." Microelectronic Engineering 48, no. 1 (1999): 295-298. Full Text
  - Shanware, A, Massoud, HZ, Vogel, E, Henson, K, Hauser, JR, and Wortman, JJ. "Comparison of valence-band tunneling in pure sio₂, composite sio₂/ta₂o₅, and pure ta₂o₅, in mosfets with 1.0 nm-thick sio₂-equivalent gate dielectrics." Materials Research Society Symposium - Proceedings 567 (1999): 515-520.
  - Shanware, A, Shiely, JP, Massoud, HZ, Vogel, E, Henson, K, Srivastava, A, Osburn, C, Hauser, JR, and Wortman, JJ. "Extraction of the gate oxide thickness of N- and P-channel MOSFETs below 20 angstrom from the substrate current resulting from valence-band electron tunneling." Technical Digest - International Electron Devices Meeting (1999): 815-818.
  - Shiely, JP, and Massoud, HZ. "Simulation of the drain-current characteristics of MOSFETs with ultrathin oxides in the presence of direct tunneling." Microelectronic Engineering 48, no. 1 (1999): 101-104. Full Text
  - Vasudevan, N, Massoud, HZ, and Fair, RB. "Thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses." Journal of the Electrochemical Society 146, no. 4 (1999): 1536-1539. Full Text
  - Lucovsky, G, Yang, H, and Massoud, HZ. "Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 16, no. 4 (1998): 2191-2198. Full Text Link to Item
  - Lucovsky, G, Yang, H, and Massoud, HZ. "Heterointerface dipoles: Applications to (a) Si-SiO₂, (b) nitrided Si-N-SiO₂, and (c) SiC-SiO₂ interfaces." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16, no. 4 (1998): 2191-2198.
  - Vasudevan, N, Fair, RB, Massoud, HZ, Zhao, T, Look, K, Karpovich, Y, and Hart, MJ. "ON-state reliability of amorphous-silicon antifuses." Journal of Applied Physics 84, no. 11 (1998): 6440-6447.
  - Vasudevan, N, Fair, RB, and Massoud, HZ. "Energy considerations during the growth of a molten filament in metal-to-metal amorphous-silicon antifuses." Journal of Applied Physics 84, no. 9 (1998): 4979-4983.
  - Wu, Y, Lucovsky, G, and Massoud, HZ. "Improvement of gate dielectric reliability for p+ poly MOS devices using remote PECVD top nitride deposition on thin gate oxides." Annual Proceedings - Reliability Physics (Symposium) (1998): 70-75.
  - Massoud, HZ, and Shiely, JP. "The role of substrate carrier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Norheim tunneling regime." Microelectronic Engineering 36, no. 1-4 (1997): 263-266.
  - Massoud, HZ. "Thermal oxidation of silicon in the ultrathin regime." Solid-State Electronics 41, no. 7 (1997): 929-934.
  - Massoud, HZ. "Device physics and simulation of metal/ferroelectric-film/p-type silicon capacitors." Microelectronic Engineering 36, no. 1-4 (1997): 95-98.
  - Mirabedini, MR, Goodwin-Johansson, SH, and Massoud, HZ. "Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon." Electronics Letters 33, no. 13 (1997): 1183-1184.
  - Conrad, KA, Sampson, RK, Massoud, HZ, and Irene, EA. "Design and construction of a rapid thermal processing system for in situ optical measurements." Review of Scientific Instruments 67, no. 11 (1996): 3954-3957.
  - Massoud, HZ. "The onset of the thermal oxidation of silicon from room temperature to 1000°C." Microelectronic Engineering 28, no. 1-4 (1995): 109-116.
  - Mirabedini, MR, Goodwin-Johansson, SH, Massoud, HZ, and Fair, RB. "Subquarter-micrometre elevated source-and-drain MOSFET structure using polysilicon spacers." Electronics Letters 30, no. 19 (1994): 1631-1632. Full Text
  - Mirabedini, MR, Goodwin-Johansson, SH, and Massoud, HZ. "New properties and applications of electron-beam evaporated silicon in submicron elevated source/drain metal-oxide-semiconductor field-effect transistors." Applied Physics Letters 65, no. 6 (1994): 728-730. Full Text
  - Sampson, RK, Conrad, KA, Massoud, HZ, and Irene, EA. "Wavelength considerations for improved silicon wafer temperature measurement by ellipsometry." Journal of the Electrochemical Society 141, no. 2 (1994): 539-542.
  - Sampson, RK, Conrad, KA, Massoud, HZ, and Irene, EA. "Substrate doping and microroughness effects in RTP temperature measurement by in situ ellipsometry." Journal of the Electrochemical Society 141, no. 3 (1994): 737-741.
  - CONRAD, KA, SAMPSON, RK, MASSOUD, HZ, and IRENE, EA. "ELLIPSOMETRIC MONITORING AND CONTROL OF THE RAPID THERMAL-OXIDATION OF SILICON." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 11, no. 6 (1993): 2096-2101. Full Text Link to Item
  - Neuman, MR, Fair, RB, Mehragany, M, and Massoud, HZ. "Microelectromechanical systems: a new technology for biomedical applications." Proceedings of the Annual Conference on Engineering in Medicine and Biology 15, no. pt 3 (1993): 1545-1546.
  - Sampson, RK, Conrad, KA, Irene, EA, and Massoud, HZ. "Simultaneous silicon wafer temperature and oxide film thickness measurement in rapid-thermal processing using ellipsometry." Journal of the Electrochemical Society 140, no. 6 (1993): 1734-1743.
  - Sampson, RK, and Massoud, HZ. "Resolution of silicon wafer temperature measurement by in suit ellipsometry in a rapid thermal processor." Journal of the Electrochemical Society 140, no. 9 (1993): 2673-2678.
  - MITANI, K, and MASSOUD, HZ. "C-V MEASUREMENT AND SIMULATION OF SILICON-INSULATOR-SILICON (SIS) STRUCTURES FOR ANALYZING CHARGES IN BURIED OXIDES OF BONDED SOI MATERIALS." IEICE TRANSACTIONS ON ELECTRONICS E75C, no. 12 (December 1992): 1421-1429. Link to Item
  - Mastrototaro, JJ, Massoud, HZ, Pilkington, TC, and Ideker, RE. "Rigid and flexible thin-film multielectrode arrays for transmural cardiac recording." Ieee Transactions on Bio Medical Engineering 39, no. 3 (March 1992): 271-279. Full Text
  - Deaton, R, and Massoud, HZ. "Manufacturability of rapid-thermal oxidation of silicon: Oxide thickness, oxide thickness variation, and system dependency." IEEE Transactions on Semiconductor Manufacturing 5, no. 4 (1992): 347-358. Full Text
  - GOODWINJOHANSSON, SH, RAY, M, KIM, YD, and MASSOUD, HZ. "RECONSTRUCTED 2-DIMENSIONAL DOPING PROFILES FROM MULTIPLE ONE-DIMENSIONAL SECONDARY ION MASS-SPECTROMETRY MEASUREMENTS." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 10, no. 1 (1992): 369-379. Full Text Link to Item
  - Mitani, K, and Massoud, HZ. "C-V measurement and simulation of silicon-insulator-silicon (SIS) structures for analyzing charges in buried oxides of bonded SOI materials." IEICE Trans. Electron. (Japan) E75-C, no. 12 (1992): 1421-1429. (Academic Article)
  - Deaton, R, and Massoud, HZ. "Effect of thermally induced stresses on the rapid-thermal oxidation of silicon." Journal of Applied Physics 70, no. 7 (1991): 3588-3592. Full Text
  - Kim, Y, Massoud, HZ, Goesele, UM, and Fair, RB. "Physical modeling of the time constant of transient enhancement in the diffusion of ion-implanted dopants in silicon." Proceedings - The Electrochemical Society 91, no. 4 (1991): 254-272.
  - Kim, Y, Tan, TY, Massoud, HZ, and Fair, RB. "Modeling the enhanced diffusion of implanted boron in silicon." Proceedings - The Electrochemical Society 91, no. 4 (1991): 304-320.
  - Mitani, K, Lehmann, V, Stengl, R, Feijoo, D, Gosele, UM, and Massoud, HZ. "Causes and prevention of temperature-dependent bubbles in silicon wafer bonding." Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 30, no. 4 (1991): 615-622.
  - Rogers, WB, and Massoud, HZ. "Characterization and modeling of the role of silicon self-interstitials (Si_I) in stacking-fault growth. II. Si_I injection by oxygen precipitation." Proceedings - The Electrochemical Society 91, no. 4 (1991): 495-515.
  - Rogers, WB, and Massoud, HZ. "Determination of the kinetic coefficients of silicon self-interstitials from back-side oxidation/front-surface stacking-fault growth experiments." Journal of the Electrochemical Society 138, no. 11 (1991): 3483-3491.
  - Rogers, WB, and Massoud, HZ. "Characterization and modeling of the role of silicon self-interstitials (Si_I) in stacking-fault growth. I.Si_I injection by backside oxidation." Proceedings - The Electrochemical Society 91, no. 4 (1991): 474-494.
  - Rogers, WB, and Massoud, HZ. "Determination of the kinetic coefficients of silicon self-interstitials from oxygen precipitation/front-surface stacking-fault growth experiments." Journal of the Electrochemical Society 138, no. 11 (1991): 3492-3498.
  - Tsuei, TW, Henderson, RH, and Massoud, HZ. "Optimum preparation and storage of Ag/Cl and Pt black microelectrodes for transmural cardiac recording applications." Proceedings of the Annual Conference on Engineering in Medicine and Biology 13, no. pt 4 (1991): 1585-1586.
  - Vitkavage, SC, Irene, EA, and Massoud, HZ. "An investigation of Si‐SiO 2 interface charges in thermally oxidized (100), (110), (111), and (511) silicon." Journal of Applied Physics 68, no. 10 (November 15, 1990): 5262-5272. Full Text
  - Ash, B, Massoud, HZ, Jr, HTN, and Wortman, JJ. "Electrode fabrication." Proceedings of the Annual Conference on Engineering in Medicine and Biology , no. pt 2 (1990): 681-684.
  - Kim, Y, Massoud, HZ, Chevacharoeukul, S, and Fair, RB. "Role of end-of-range dislocation loops as a diffusion barrier." Proceedings - The Electrochemical Society 90, no. 7 (1990): 437-446.
  - Kim, Y, Massoud, HZ, and Fair, RB. "Effect of annealing ambient on dopant diffusion in silicon during low-temperature processing." Journal of the Electrochemical Society 137, no. 8 (1990): 2599-2603.
  - Massoud, HZ. "Silicon oxidation kinetics in the thin-film regime." Conference on Solid State Devices and Materials (1990): 1083-1086.
  - Subrahmanyan, R, Massoud, HZ, and Fair, RB. "Comparison of measured and simulated two-dimensional phosphorus diffusion profiles in silicon." Journal of the Electrochemical Society 137, no. 5 (1990): 1573-1579.
  - Ward, RR, Massoud, HZ, and Fair, RB. "Thermal oxidation of heavily doped silicon in the thin-film regime. Dopant behavior and modeling growth kinetics." Proceedings - The Electrochemical Society 90, no. 7 (1990): 405-416.
  - Goodwin-Johansson, SH, Subrahmanyan, R, Floyd, CE, and Massoud, HZ. "Two-dimensional impurity profiling with emission computed tomography techniques." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 8, no. 4 (1989): 323-325. Full Text
  - Kim, Y, Massoud, HZ, and Fair, RB. "The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation." Journal of Electronic Materials 18, no. 2 (1989): 143-150. Full Text
  - Mastrototaro, JJ, Pilkington, TC, Ideker, RE, and Massoud, HZ. "Thin-film flexible multielectrode arrays for voltage measurements in the heart." Annual International Conference of the IEEE Engineering in Medicine and Biology - Proceedings 11 pt 1 (1989): 212--.
  - Rogers, WB, Massoud, HZ, Fair, RB, Gösele, UM, Tan, TY, and Rozgonyi, GA. "The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon." Journal of Applied Physics 65, no. 11 (1989): 4215-4219. Full Text
  - Rogers, WB, and Massoud, HZ. "Transfer of patterns from the backside of a silicon wafer coated with Si₃N₄ to its front surface during wet oxidation." Applied Physics Letters 55, no. 2 (1989): 159-161. Full Text
  - Subrahmanyan, R, Massoud, HZ, and Fair, RB. "Accurate junction-depth measurements using chemical staining." ASTM Special Technical Publication , no. 990 (1989): 126-. (Academic Article)
  - KIM, Y, FAIR, RB, and MASSOUD, HZ. "ON THE ROLE OF ION-IMPLANTATION DAMAGE IN SILICON ON DOPANT DIFFUSION FOR SHALLOW JUNCTION FORMATION." JOURNAL OF ELECTRONIC MATERIALS 17, no. 4 (July 1988): S26-S26. Link to Item
  - MASSOUD, HZ, and PLUMMER, JD. "A PHYSICAL MODEL FOR THE OBSERVED DEPENDENCE OF THE METAL-SEMICONDUCTOR WORKFUNCTION DIFFERENCE ON SUBSTRATE ORIENTATION." JOURNAL OF THE ELECTROCHEMICAL SOCIETY 135, no. 3 (March 1988): C136-C136. Link to Item
  - Kim, Y, Massoud, HZ, and Fair, RB. "Boron profile changes during low-temperature annealing of BF ⁺₂-implanted silicon." Applied Physics Letters 53, no. 22 (1988): 2197-2199. Full Text
  - Lyon, TJD, Jr, HCC, Massoud, HZ, Timmons, ML, Hutchby, JA, and Dietrich, HB. "Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions." Applied Physics Letters 52, no. 26 (1988): 2244-2246. Full Text
  - Massoud, HZ. "Charge-transfer dipole moments at the Si-SiO₂ interface." Journal of Applied Physics 63, no. 6 (1988): 2000-2005. Full Text
  - Massoud, HZ. "Reverse dopant redistribution during the initial stages of the oxidation of heavily doped silicon in dry oxygen." Applied Physics Letters 53, no. 6 (1988): 497-499. Full Text
  - Mastrototaro, JJ, Pilkington, TC, Ideker, RE, and Massoud, HZ. "Thin-film multielectrode arrays for potential gradient measurements in the heart." IEEE/Engineering in Medicine and Biology Society Annual Conference 10, no. pt 1 (1988): 90--.
  - Subrahmanyan, R, Massoud, HZ, and Fair, RB. "Experimental characterization of two-dimensional dopant profiles in silicon using chemical staining." Applied Physics Letters 52, no. 25 (1988): 2145-2147. Full Text
  - SUBRAHMANYAN, R, MASSOUD, HZ, and FAIR, RB. "MEASUREMENT OF TWO-DIMENSIONAL DIFFUSION PROFILES." JOURNAL OF THE ELECTROCHEMICAL SOCIETY 134, no. 8B (August 1987): C451-C451. Link to Item
  - ROGERS, B, MASSOUD, HZ, FAIR, RB, GOSELE, UM, SHAW, R, KORB, H, and GUSE, M. "POINT-DEFECT KINETICS DURING BACK SIDE OXIDATION MEASURED BY FRONT SIDE STACKING-FAULT GROWTH." JOURNAL OF THE ELECTROCHEMICAL SOCIETY 134, no. 3 (March 1987): C125-C125. Link to Item
  - SUBRAHMANYAN, R, MASSOUD, HZ, and FAIR, RB. "CHARACTERIZATION AND MODELING OF THE DIFFUSION OF BORON AND ARSENIC IN SI IN DRY O2/HCL MIXTURES." JOURNAL OF THE ELECTROCHEMICAL SOCIETY 134, no. 3 (March 1987): C124-C125. Link to Item
  - Massoud, HZ, and Plummer, JD. "Analytical relationship for the oxidation of silicon in dry oxygen in the thin-film regime." Journal of Applied Physics 62, no. 8 (1987): 3416-3423. Full Text
  - Subrahmanyan, R, Massoud, HZ, and Fair, RB. "The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon." Journal of Applied Physics 61, no. 10 (1987): 4804-4807. Full Text
  - Irene, EA, Massoud, HZ, and Tierney, E. "SILICON OXIDATION STUDIES: SILICON ORIENTATION EFFECTS ON THERMAL OXIDATION." Journal of the Electrochemical Society 133, no. 6 (1986): 1253-1256.
  - Mastrototaro, JJ, Massoud, HZ, Pilkington, TC, and Ideker, RE. "VLSI APPROACH FOR CARDIAC MULTIELECTRODE PROBE FABRICATION." IEEE/Engineering in Medicine and Biology Society Annual Conference (1986): 1603-1605.
  - WILSON, WB, MASSOUD, HZ, SWANSON, EJ, GEORGE, RT, and FAIR, RB. "MEASUREMENT AND MODELING OF CHARGE FEEDTHROUGH IN N-CHANNEL MOS ANALOG SWITCHES." IEEE JOURNAL OF SOLID-STATE CIRCUITS 20, no. 6 (December 1985): 1206-1213. Full Text Link to Item
  - Manda, ML, Shepard, ML, Fair, RB, and Massoud, HZ. "STRESS-ASSISTED DIFFUSION OF BORON AND ARSENIC IN SILICON." Materials Research Society Symposia Proceedings 36 (1985): 71-76.
  - Massoud, HZ, Plummer, JD, and Irene, EA. "THERMAL OXIDATION OF SILICON IN DRY OXYGEN: GROWTH-RATE ENHANCEMENT IN THE THIN REGIME. II. PHYSICAL MECHANISMS." Journal of the Electrochemical Society 132, no. 11 (1985): 2693-2700.
  - Massoud, HZ, Plummer, JD, and Irene, EA. "Thermal Oxidation of Silicon in Dry Oxygen Growth-Rate Enhancement in the Thin Regime I. Experimental Results." Journal of the Electrochemical Society 132, no. 11 (January 1, 1985): 2685-2693. Full Text
  - Massoud, HZ. "Thermal Oxidation of Silicon in Dry Oxygen Accurate Determination of the Kinetic Rate Constants." Journal of the Electrochemical Society 132, no. 7 (January 1, 1985): 1745-1753. Full Text
  - Wilson, WB, Massoud, HZ, Swanson, EJ, Jr, RTG, and Fair, RB. "MEASUREMENT AND MODELING OF CHARGE FEEDTHROUGH IN N-CHANNEL MOS ANALOG SWITCHES." IEEE Journal of Solid-State Circuits SC-20, no. 6 (1985): 1206-1213.
  - Young, DR, Irene, EA, DiMaria, DJ, DeKeersmaecker, RF, and Massoud, HZ. "ELECTRON TRAPPING IN SiO//2 AT 295 AND 77 degree K." Journal of Applied Physics 50, no. 10 (1979): 6366-6372. Full Text
  - YOUNG, DR, IRENE, EA, DIMARIA, DJ, MASSOUD, HZ, and DEKEERSMAECKER, RF. "EFFECTS OF HEAT-TREATMENT ON ELECTRON TRAPPING CHARACTERISTICS OF SIO2 AT 300-DEGREES-K AND 77-DEGREES-K." JOURNAL OF THE ELECTROCHEMICAL SOCIETY 125, no. 3 (1978): C127-C127. Link to Item
- Conference Papers
  - Coonley, K, Brooke, M, Ethier, P, and Massoud, H. "Design of a flexible RF data link and associated laboratory curriculum in a first analog electronics and devices course." January 1, 2009.
  - Ybarra, GA, Collins, LM, Huettel, LG, Massoud, HZ, Board, JA, Brooke, M, Jokerst, NM, Choudhury, RR, Gustafson, MR, Willett, RM, and Coonley, K. "Integrating sensing and information processing in an electrical and computer engineering undergraduate curriculum." 2009. Full Text
  - Brown, A, Ybarra, G, Massoud, H, Board, J, Holmes, J, Coonley, K, Collins, L, Huettel, L, Gustafson, M, and Cummer, S. "Redesign of the core curriculum at Duke University." January 1, 2006.
  - Brown, A, Ybarra, G, Massoud, H, Board, J, Holmes, J, Coonley, K, Collins, L, Huettel, L, Gustafson, M, and Cummer, S. "Redesign of the core curriculum at Duke University." 2006.
  - Collins, LM, Huettel, LG, Brown, AS, Ybarra, GA, Holmes, JS, Board, JA, Cummer, SA, Gustafson, MR, Kim, J, and Massoud, HZ. "Theme-based redesign of the duke university ECE curriculum: The first steps." 2005.
  - Huettel, L, Brown, A, Gustafson, M, Massoud, H, Ybarra, G, and Collins, L. "Work in progress: Theme-based redesign of an electrical and computer engineering curriculum." 2004.
  - Niimi, H, Johnson, RS, Lucovsky, G, and Massoud, HZ. "Electrical performance of stacked high-k gate dielectrics: Remote plasma CVD Ta2O5 and (Ta2O5)(x)(SiO2)(1-x) alloys with ultrathin plasma processed SiO2 interface layers." 2000. Link to Item
  - Shanware, A, Massoud, HZ, Vogel, E, Henson, K, Hauser, JR, and Wortman, JJ. "Comparison of valence-band tunneling in pure SiO2, composite SiO2/Ta2O5, and pure Ta2O5, in MOSFETS with 1.0 nm-thick SiO2-equivalent gate dielectrics." 1999. Full Text Link to Item
  - Massoud, HZ, and Ishitani, A. "Dielectrics, interfaces, and epitaxy." 1998. Link to Item
  - Massoud, HZ. "A simple model of the chemical nature of bonds at the Si-SiO2 interface and its influence on the electronic properties of MOS devices." 1998. Link to Item
  - Massoud, HZ. "Ellipsometry-based process monitoring and control for ultrathin gate dielectrics." 1997. Link to Item
  - Thees, HJ, Osburn, CM, Shiely, JP, and Massoud, HZ. "Wear-out and stress-induced leakage current of ultrathin gate oxides." 1996. Link to Item
  - MASSOUD, HZ, and RAIDER, SI. "DEPOSITION AND PROPERTIES OF SIO2 - INTRODUCTION." 1993. Link to Item
  - DEATON, R, and MASSOUD, HZ. "RESPONSE-SURFACE ANALYSIS OF THE RAPID THERMAL-OXIDATION OF SILICON." 1991. Link to Item
  - MASSOUD, HZ, SAMPSON, RK, CONRAD, KA, HU, YZ, and IRENE, EA. "APPLICATIONS OF INSITU ELLIPSOMETRY IN RTP TEMPERATURE-MEASUREMENT AND PROCESS-CONTROL." 1991. Full Text Link to Item
Teaching & Mentoring
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Service to the Profession
- General Chair and Program Chair. IEEE Interface Specialists Conference. IEEE Electron Device Society. 1992 - 1994 1992 - 1994

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