Scholars@Duke

• Background
• 

  Education, Training, & Certifications

  • Ph.D., Stanford University 1983
  • M.S., Stanford University 1976
  • M.S., Cairo University (Egypt) 1975
  • B.S., Cairo University (Egypt) 1973
• 

  Duke Appointment History

  • Chair, Department of Electrical and Computer Engineering, Electrical and Computer Engineering, Pratt School of Engineering 2006 - 2007
  • Interim Chair, Department of Electrical and Computer Engineering, Electrical and Computer Engineering, Pratt School of Engineering 2001 - 2002
  • Associate Professor with Tenure, Electrical and Computer Engineering, Pratt School of Engineering 1989 - 1999
  • Associate Professor, Biomedical Engineering, Pratt School of Engineering 1993 - 1995
  • Associate Professor, Electrical and Computer Engineering, Pratt School of Engineering 1986 - 1989
  • Assistant Professor, Electrical and Computer Engineering, Pratt School of Engineering 1983 - 1986
• Recognition
• 

  Awards & Honors

  • Life Fellow. Institute for Electrical and Electronics Engineers. 2015
  • Electronics and Photonics Division Award. Electrochemical Society. 2006
  • Fellow. Electrochemical Society. 2006
  • Inventor Recognition Award. Semiconductor Research Corporation. 2005
• Expertise
• 

  Global Scholarship

  • Research

    • Saudi Arabia (Country) 

  • Teaching

    • Saudi Arabia (Country) 
• Research
• 

  Selected Grants

  • The (Final) Rewrite of the Electronics Curriculum awarded by Lord Foundation of North Carolina 2002 - 2005
  • The Introduction of Animation in the Teaching of Solid-State Electronics awarded by Lord Foundation of North Carolina 1997 - 1998
  • Cell Shape and Growth Regulation by Micro-patterned Surfaces awarded by  National Science Foundation 1995 - 1998
  • Photoelectric Investigation of the Processing Dependence of the Effective Contact Potential Difference in MOS Devices awarded by US-Polish Joint Commission 1994 - 1997
  • Micro-Electro-Mechanical Cell Probers for Research in Microbiology and Medicine awarded by Lord Foundation of North Carolina 1993
  • The Properties of Silicon Dioxide Layers Grown Using Rapid Thermal Oxidation of Silicon in Radiation Environments awarded by Office of Naval Research 1987 - 1988
• Publications & Artistic Works
• 

  Selected Publications

  • Academic Articles

    • Ybarra, G. A., L. M. Collins, L. G. Huettel, K. D. Coonley, H. Z. Massoud, J. A. Board, S. A. Cummer, et al. “Integrated sensing and information processing theme-based redesign of the undergraduate electrical and computer engineering curriculum at Duke University.” Advances in Engineering Education 2, no. 4 (2010).
    • Oliver, L. D., K. Chakrabarty, and H. Z. Massoud. “Dual-threshold pass-transistor logic design.” Proceedings of the Acm Great Lakes Symposium on Vlsi, Glsvlsi, November 6, 2009, 291–96. https://doi.org/10.1145/1531542.1531610.
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    • Coonley, K., M. Brooke, P. Ethier, and H. Massoud. “Design of a flexible RF data link and associated laboratory curriculum in a first analog electronics and devices course.” Asee Annual Conference and Exposition, Conference Proceedings, September 1, 2009.
    • Cheng, C., J. H. Lee, H. Z. Massoud, and Q. H. Liu. “3-D self-consistent Schrödinger-Poisson solver: The spectral element method.” Journal of Computational Electronics 7, no. 3 (February 15, 2008): 337–41. https://doi.org/10.1007/s10825-008-0204-8.
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    • Cheng, Candong, Joon-Ho Lee, Kim Hwa Lim, Hisham Z. Massoud, and Qing Huo Liu. “3-D Quantum Transport Solver Based on the Perfectly Matched Layer and Spectral Element Methods for the Simulation of Semiconductor Nanodevices.” Journal of Computational Physics 227, no. 1 (November 2007): 455–71. https://doi.org/10.1016/j.jcp.2007.07.028.
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    • Cheng, C., J. Lee, K. H. Lim, H. Z. Massoud, and Q. H. Liu. “Solution of the 3-D schrödinger equation with tensor effective mass based on perfectly matched layer and spectral element methods.” Proceedings of Spie  the International Society for Optical Engineering 6468 (May 23, 2007). https://doi.org/10.1117/12.696730.
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    • Oliver, L. D., K. Chakrabarty, and H. Z. Massoud. “An evaluation of the impact of gate oxide tunneling on dual-V t-based leakage reduction techniques.” Proceedings of the Acm Great Lakes Symposium on Vlsi, Glsvlsi 2006 (November 16, 2006): 105–10.
    • Massoud, H. Z., and E. T. Pratt. “Growth kinetics and electrical properties of ultrathin silicon-dioxide layers.” Ecs Transactions 2, no. 2 (July 3, 2006): 189–203.
    • Massoud, H. Z., J. H. Stathis, T. Hattori, D. Misra, and I. Baumvol. “ECS Transactions: Preface.” Ecs Transactions 1, no. 1 (December 1, 2005).
    • Shen, M. Y. C., J. Jopling, and H. Z. Massoud. “On the effects of carrier tunneling on the capacitance-voltage characteristics of ultrathin-oxide MOSFETs.” Ecs Transactions 1, no. 1 (December 1, 2005): 283–94.
    • Cheng, C., Q. H. Liu, and H. Z. Massoud. “Spectral element method for the schrödinger-poisson system.” 2004 10th International Workshop on Computational Electronics, Ieee Iwce 10 2004, Abstracts, December 1, 2004, 221–22.
    • Cheng, C., Q. H. Liu, J. H. Lee, and H. Z. Massoud. “Spectral element method for the Schrödinger-Poisson system.” Journal of Computational Electronics 3, no. 3–4 (October 1, 2004): 417–21. https://doi.org/10.1007/s10825-004-7088-z.
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    • Liu, Q. H., C. Cheng, and H. Z. Massoud. “The spectral grid method: A novel fast Schrödinger-equation solver for semiconductor nanodevice simulation.” Ieee Transactions on Computer Aided Design of Integrated Circuits and Systems 23, no. 8 (August 1, 2004): 1200–1208. https://doi.org/10.1109/TCAD.2004.831592.
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    • Przewlocki, H. M., A. Kudla, D. Brzezinska, and H. Z. Massoud. “Distribution of the contact-potential difference local values over the gate area of MOS structures.” Microelectronic Engineering 72, no. 1–4 (April 1, 2004): 165–73. https://doi.org/10.1016/j.mee.2003.12.031.
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    • Przewlocki, H. M., A. Kudla, D. Brzezinska, L. Borowicz, Z. Sawicki, and H. Z. Massoud. “The lateral distribution of the effective contact potential difference over the gate area of MOS structures.” Electron Technology 35 (January 5, 2004).
    • Massoud, H. Z., and H. M. Przewlocki. “Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal-oxide-semiconductor devices.” Journal of Applied Physics 92, no. 4 (August 15, 2002): 2202–6. https://doi.org/10.1063/1.1489500.
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    • Przewlocki, H. M., and H. Z. Massoud. “Effects of stress annealing in nitrogen on the effective contact-potential difference, charges, and traps at the Si/SiO 2 interface of metal-oxide-semiconductor devices.” Journal of Applied Physics 92, no. 4 (August 15, 2002): 2198–2201. https://doi.org/10.1063/1.1489499.
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    • Massoud, H. Z., J. P. Shiely, and A. Shanware. “Self-consistent mosfet tunneling simulations-trends in the gate and substrate currents and the drain-current turnaround effect with oxide scaling.” Materials Research Society Symposium  Proceedings 567 (December 1, 1999): 227–39.
    • Shanware, A., J. P. Shiely, H. Z. Massoud, E. Vogel, K. Henson, A. Srivastava, C. Osburn, J. R. Hauser, and J. J. Wortman. “Extraction of the gate oxide thickness of N- and P-channel MOSFETs below 20 angstrom from the substrate current resulting from valence-band electron tunneling.” Technical Digest  International Electron Devices Meeting, December 1, 1999, 815–18.
    • Vasudevan, N., H. Z. Massoud, and R. B. Fair. “Thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses.” Journal of the Electrochemical Society 146, no. 4 (April 1, 1999): 1536–39. https://doi.org/10.1149/1.1391800.
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    • Shanware, A., H. Z. Massoud, A. Acker, V. Z. Q. Li, M. R. Mirabedini, K. Henson, J. R. Hauser, and J. J. Wortman. “Effects of Ge content in poly-Si1-xGex gate material on the tunneling barrier in PMOS devices.” Microelectronic Engineering 48, no. 1 (January 1, 1999): 39–42. https://doi.org/10.1016/S0167-9317(99)00333-0.
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    • Shanware, A., H. Z. Massoud, A. Acker, V. Z. Q. Li, M. R. Mirabedini, K. Henson, J. R. Hauser, and J. J. Wortman. “Modeling the dependence of the gate current on Ge content in ultrathin gate dielectric PMOS devices with POLY-Si1Gex gate material.” Materials Research Society Symposium  Proceedings 567 (January 1, 1999): 127–33. https://doi.org/10.1557/proc-567-127.
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    • Shanware, A., H. Z. Massoud, E. Vogel, K. Henson, J. R. Hauser, and J. J. Wortman. “Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling.” Microelectronic Engineering 48, no. 1 (January 1, 1999): 295–98. https://doi.org/10.1016/S0167-9317(99)00392-5.
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    • Shanware, A., H. Z. Massoud, E. Vogel, K. Henson, J. R. Hauser, and J. J. Wortman. “Comparison of valence-band tunneling in pure sio₂, composite sio₂/ta₂o₅, and pure ta₂o₅, in mosfets with 1.0 nm-thick sio₂-equivalent gate dielectrics.” Materials Research Society Symposium  Proceedings 567 (1999): 515–20.
    • Shiely, J. P., and H. Z. Massoud. “Simulation of the drain-current characteristics of MOSFETs with ultrathin oxides in the presence of direct tunneling.” Microelectronic Engineering 48, no. 1 (January 1, 1999): 101–4. https://doi.org/10.1016/S0167-9317(99)00347-0.
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    • Vasudevan, N., R. B. Fair, H. Z. Massoud, T. Zhao, K. Look, Y. Karpovich, and M. J. Hart. “ON-state reliability of amorphous-silicon antifuses.” Journal of Applied Physics 84, no. 11 (December 1, 1998): 6440–47. https://doi.org/10.1063/1.368884.
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    • Vasudevan, N., R. B. Fair, and H. Z. Massoud. “Energy considerations during the growth of a molten filament in metal-to-metal amorphous-silicon antifuses.” Journal of Applied Physics 84, no. 9 (November 1, 1998): 4979–83. https://doi.org/10.1063/1.368743.
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    • Lucovsky, G., H. Yang, and H. Z. Massoud. “Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16, no. 4 (July 1, 1998): 2191–98.
    • Lucovsky, G., H. Yang, and H. Z. Massoud. “Heterointerface dipoles: Applications to (a) Si-SiO₂, (b) nitrided Si-N-SiO₂, and (c) SiC-SiO₂ interfaces.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16, no. 4 (1998): 2191–98.
    • Wu, Y., G. Lucovsky, and H. Z. Massoud. “Improvement of gate dielectric reliability for p+ poly MOS devices using remote PECVD top nitride deposition on thin gate oxides.” Annual Proceedings  Reliability Physics (Symposium), January 1, 1998, 70–75.
    • Mirabedini, M. R., S. H. Goodwin-Johansson, and H. Z. Massoud. “Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon.” Electronics Letters 33, no. 13 (June 19, 1997): 1183–84. https://doi.org/10.1049/el:19970776.
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    • Massoud, H. Z. “Thermal oxidation of silicon in the ultrathin regime.” Solid State Electronics 41, no. 7 (January 1, 1997): 929–34. https://doi.org/10.1016/S0038-1101(97)00001-4.
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    • Massoud, H. Z. “Device physics and simulation of metal/ferroelectric-film/p-type silicon capacitors.” Microelectronic Engineering 36, no. 1–4 (January 1, 1997): 95–98. https://doi.org/10.1016/S0167-9317(97)00023-3.
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    • Massoud, H. Z., and J. P. Shiely. “The role of substrate carrier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Norheim tunneling regime.” Microelectronic Engineering 36, no. 1–4 (January 1, 1997): 263–66. https://doi.org/10.1016/S0167-9317(97)00060-9.
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    • Conrad, K. A., R. K. Sampson, H. Z. Massoud, and E. A. Irene. “Design and construction of a rapid thermal processing system for in situ optical measurements.” Review of Scientific Instruments 67, no. 11 (January 1, 1996): 3954–57. https://doi.org/10.1063/1.1147273.
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    • Massoud, H. Z. “The onset of the thermal oxidation of silicon from room temperature to 1000°C.” Microelectronic Engineering 28, no. 1–4 (January 1, 1995): 109–16. https://doi.org/10.1016/0167-9317(95)00026-5.
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    • Mirabedini, M. R., S. H. Goodwin-Johansson, and H. Z. Massoud. “New properties and applications of electron-beam evaporated silicon in submicron elevated source/drain metal-oxide-semiconductor field-effect transistors.” Applied Physics Letters 65, no. 6 (December 1, 1994): 728–30. https://doi.org/10.1063/1.113014.
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    • Mirabedini, R. R., S. H. Goodwin-Johansson, H. Z. Massoud, and R. B. Fair. “Subquarter-mícrometre elevated source-and-drain MOSFET structure using polysilicon spacers.” Electronics Letters 30, no. 19 (January 1, 1994): 1631–32. https://doi.org/10.1049/el:19941068.
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    • Sampson, R. K., K. A. Conrad, H. Z. Massoud, and E. A. Irene. “Wavelength Considerations for Improved Silicon Wafer Temperature Measurement by Ellipsometry.” Journal of the Electrochemical Society 141, no. 2 (January 1, 1994): 539–42. https://doi.org/10.1149/1.2054762.
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    • Sampson, R. K., K. A. Conrad, and H. Z. Massoud. “Substrate Doping and Microroughness Effects in RTP Temperature Measurement by in Situ Ellipsometry.” Journal of the Electrochemical Society 141, no. 3 (January 1, 1994): 737–41. https://doi.org/10.1149/1.2054802.
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    • Neuman, M. R., R. B. Fair, M. Mehragany, and H. Z. Massoud. “Microelectromechanical systems: a new technology for biomedical applications.” Proceedings of the Annual Conference on Engineering in Medicine and Biology 15, no. pt 3 (December 1, 1993): 1545–46.
    • Conrad, K. A. “Ellipsometric monitoring and control of the rapid thermal oxidation of silicon.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, no. 6 (November 1993): 2096–2096. https://doi.org/10.1116/1.586548.
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    • Sampson, R. K., and H. Z. Massoud. “Resolution of Silicon Wafer Temperature Measurement by in Situ Ellipsometry in a Rapid Thermal Processor.” Journal of the Electrochemical Society 140, no. 9 (January 1, 1993): 2673–78. https://doi.org/10.1149/1.2220884.
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    • Sampson, R. K., and H. Z. Massoud. “Simultaneous Silicon Wafer Temperature and Oxide Film Thickness Measurement in Rapid-Thermal Processing Using Eilipsometry.” Journal of the Electrochemical Society 140, no. 6 (January 1, 1993): 1734–43. https://doi.org/10.1149/1.2221633.
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    • MITANI, K., and H. Z. MASSOUD. “C-V MEASUREMENT AND SIMULATION OF SILICON-INSULATOR-SILICON (SIS) STRUCTURES FOR ANALYZING CHARGES IN BURIED OXIDES OF BONDED SOI MATERIALS.” Ieice Transactions on Electronics E75C, no. 12 (December 1992): 1421–29.
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    • Mastrototaro, J. J., H. Z. Massoud, T. C. Pilkington, and R. E. Ideker. “Rigid and flexible thin-film multielectrode arrays for transmural cardiac recording.” Ieee Transactions on Bio Medical Engineering 39, no. 3 (March 1992): 271–79. https://doi.org/10.1109/10.125012.
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    • Deaton, R., and H. Z. Massoud. “Manufacturability of Rapid-Thermal Oxidation of Silicon: Oxide Thickness, Oxide Thickness Variation, and System Dependency.” Ieee Transactions on Semiconductor Manufacturing 5, no. 4 (January 1, 1992): 347–58. https://doi.org/10.1109/66.175367.
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    • Goodwin-Johansson, Scott H. “Reconstructed two-dimensional doping profiles from multiple one-dimensional secondary ion mass spectrometry measurements.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 10, no. 1 (January 1992): 369–369. https://doi.org/10.1116/1.586360.
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    • Mitani, K., and H. Z. Massoud. “C-V measurement and simulation of silicon-insulator-silicon (SIS) structures for analyzing charges in buried oxides of bonded SOI materials.” Ieice Trans. Electron. (Japan) E75-C, no. 12 (1992): 1421–29.
    • Deaton, R., and H. Z. Massoud. “Effect of thermally induced stresses on the rapid-thermal oxidation of silicon.” Journal of Applied Physics 70, no. 7 (December 1, 1991): 3588–92. https://doi.org/10.1063/1.349254.
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    • Tsuei, T. W., R. H. Henderson, and H. Z. Massoud. “Optimum preparation and storage of Ag/Cl and Pt black microelectrodes for transmural cardiac recording applications.” Proceedings of the Annual Conference on Engineering in Medicine and Biology 13, no. pt 4 (December 1, 1991): 1585–86.
    • Boyd Rogers, W., and H. Z. Massoud. “Characterization and modeling of the role of silicon self-interstitials (SiI) in stacking-fault growth. II. SiI injection by oxygen precipitation.” Proceedings  the Electrochemical Society 91, no. 4 (January 1, 1991): 495–515.
    • Boyd Rogers, W., and H. Z. Massoud. “Characterization and modeling of the role of silicon self-interstitials (SiI) in stacking-fault growth. I.SiI injection by backside oxidation.” Proceedings  the Electrochemical Society 91, no. 4 (January 1, 1991): 474–94.
    • Kim, Y., H. Z. Massoud, U. M. Goesele, and R. B. Fair. “Physical modeling of the time constant of transient enhancement in the diffusion of ion-implanted dopants in silicon.” Proceedings  the Electrochemical Society 91, no. 4 (January 1, 1991): 254–72.
    • Kim, Y., T. Y. Tan, H. Z. Massoud, and R. B. Fair. “Modeling the enhanced diffusion of implanted boron in silicon.” Proceedings  the Electrochemical Society 91, no. 4 (January 1, 1991): 304–20.
    • Massoud, H. Z., and W. B. Rogers. “Determination of the Kinetic Coefficients of Silicon Self-Interstitials from Back-Side Oxidation/Front-Surface Stacking-Fault Growth Experiments.” Journal of the Electrochemical Society 138, no. 11 (January 1, 1991): 3483–91. https://doi.org/10.1149/1.2085439.
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    • Massoud, H. Z., and W. B. Rogers. “Determination of the Kinetic Coefficients of Silicon Self-Interstitials from Oxygen Precipitation/Front-Surface Stacking-Fault Growth Experiments.” Journal of the Electrochemical Society 138, no. 11 (January 1, 1991): 3492–98. https://doi.org/10.1149/1.2085440.
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    • Mitani, K., V. Lehmann, R. Stengl, D. Feijoo, U. M. Gosele, and H. Z. Massoud. “Causes and prevention of temperature-dependent bubbles in silicon wafer bonding.” Japanese Journal of Applied Physics 30, no. 4 (January 1, 1991): 615–22. https://doi.org/10.1143/JJAP.30.615.
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    • Ash, B., H. Z. Massoud, H. T. Nagle, and J. J. Wortman. “Electrode fabrication.” Proceedings of the Annual Conference on Engineering in Medicine and Biology, no. pt 2 (December 1, 1990): 681–84.
    • Kim, Y., H. Z. Massoud, S. Chevacharoeukul, and R. B. Fair. “Role of end-of-range dislocation loops as a diffusion barrier.” Proceedings  the Electrochemical Society 90, no. 7 (December 1, 1990): 437–46.
    • Massoud, H. Z. “Silicon oxidation kinetics in the thin-film regime.” Conference on Solid State Devices and Materials, December 1, 1990, 1083–86.
    • Vitkavage, S. C., E. A. Irene, and H. Z. Massoud. “An investigation of Si-SiO2 interface charges in thermally oxidized (100), (110), (111), and (511) silicon.” Journal of Applied Physics 68, no. 10 (December 1, 1990): 5262–72. https://doi.org/10.1063/1.347042.
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    • Ward, R. R., H. Z. Massoud, and R. B. Fair. “Thermal oxidation of heavily doped silicon in the thin-film regime. Dopant behavior and modeling growth kinetics.” Proceedings  the Electrochemical Society 90, no. 7 (December 1, 1990): 405–16.
    • Kim, Y., H. Z. Massoud, and R. B. Fair. “The Effect of Annealing Ambient on Dopant Diffusion in Silicon during Low-Temperature Processing.” Journal of the Electrochemical Society 137, no. 8 (January 1, 1990): 2599–2603. https://doi.org/10.1149/1.2086994.
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    • Subrahmanyan, R., H. Z. Massoud, and R. B. Fair. “Comparison of Measured and Simulated Two-Dimensional Phosphorus Diffusion Profiles in Silicon.” Journal of the Electrochemical Society 137, no. 5 (January 1, 1990): 1573–79. https://doi.org/10.1149/1.2086729.
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    • Rogers, W. B., H. Z. Massoud, R. B. Fair, U. M. Gösele, T. Y. Tan, and G. A. Rozgonyi. “The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon.” Journal of Applied Physics 65, no. 11 (December 1, 1989): 4215–19. https://doi.org/10.1063/1.343303.
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    • Rogers, W. B., and H. Z. Massoud. “Transfer of patterns from the backside of a silicon wafer coated with Si3N4 to its front surface during wet oxidation.” Applied Physics Letters 55, no. 2 (December 1, 1989): 159–61. https://doi.org/10.1063/1.102398.
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    • Mastrototaro, J. J., T. C. Pilkington, R. E. Ideker, and H. Z. Massoud. “Thin-film flexible multielectrode arrays for voltage measurements in the heart.” Annual International Conference of the Ieee Engineering in Medicine and Biology  Proceedings 11 pt 1 (November 1, 1989).
    • Kim, Y., H. Z. Massoud, and R. B. Fair. “The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation.” Journal of Electronic Materials 18, no. 2 (March 1, 1989): 143–50. https://doi.org/10.1007/BF02657400.
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    • Goodwin-Johansson, S. H., R. Subrahmanyan, C. E. Floyd, and H. Z. Massoud. “Two-Dimensional Impurity Profiling with Emission Computed Tomography Techniques.” Ieee Transactions on Computer Aided Design of Integrated Circuits and Systems 8, no. 4 (January 1, 1989): 323–35. https://doi.org/10.1109/43.29587.
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    • Subrahmanyan, Ravi, Hisham Z. Massoud, and Richard B. Fair. “Accurate junction-depth measurements using chemical staining.” Astm Special Technical Publication, no. 990 (1989).
    • De Lyon, T. J., H. C. Casey, H. Z. Massoud, M. L. Timmons, J. A. Hutchby, and H. B. Dietrich. “Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions.” Applied Physics Letters 52, no. 26 (December 1, 1988): 2244–46. https://doi.org/10.1063/1.99544.
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    • Kim, Y., H. Z. Massoud, and R. B. Fair. “Boron profile changes during low-temperature annealing of BF ⁺2-implanted silicon.” Applied Physics Letters 53, no. 22 (December 1, 1988): 2197–99. https://doi.org/10.1063/1.100505.
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    • Massoud, H. Z. “Charge-transfer dipole moments at the Si-SiO2 interface.” Journal of Applied Physics 63, no. 6 (December 1, 1988): 2000–2005. https://doi.org/10.1063/1.341100.
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    • Massoud, H. Z. “Reverse dopant redistribution during the initial stages of the oxidation of heavily doped silicon in dry oxygen.” Applied Physics Letters 53, no. 6 (December 1, 1988): 497–99. https://doi.org/10.1063/1.100618.
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    • Subrahmanyan, R., H. Z. Massoud, and R. B. Fair. “Experimental characterization of two-dimensional dopant profiles in silicon using chemical staining.” Applied Physics Letters 52, no. 25 (December 1, 1988): 2145–47. https://doi.org/10.1063/1.99559.
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    • Mastrototaro, J. J., T. C. Pilkington, R. E. Ideker, and H. Z. Massoud. “Thin-film multielectrode arrays for potential gradient measurements in the heart.” Ieee/Engineering in Medicine and Biology Society Annual Conference 10, no. pt 1 (November 1, 1988).
    • KIM, Y., R. B. FAIR, and H. Z. MASSOUD. “ON THE ROLE OF ION-IMPLANTATION DAMAGE IN SILICON ON DOPANT DIFFUSION FOR SHALLOW JUNCTION FORMATION.” Journal of Electronic Materials 17, no. 4 (July 1, 1988): S26–S26.
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    • MASSOUD, H. Z., and J. D. PLUMMER. “A PHYSICAL MODEL FOR THE OBSERVED DEPENDENCE OF THE METAL-SEMICONDUCTOR WORKFUNCTION DIFFERENCE ON SUBSTRATE ORIENTATION.” Journal of the Electrochemical Society 135, no. 3 (March 1, 1988): C136–C136.
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    • Massoud, H. Z., and J. D. Plummer. “Analytical relationship for the oxidation of silicon in dry oxygen in the thin-film regime.” Journal of Applied Physics 62, no. 8 (December 1, 1987): 3416–23. https://doi.org/10.1063/1.339305.
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    • Subrahmanyan, R., H. Z. Massoud, and R. B. Fair. “The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon.” Journal of Applied Physics 61, no. 10 (December 1, 1987): 4804–7. https://doi.org/10.1063/1.338342.
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    • SUBRAHMANYAN, R., H. Z. MASSOUD, and R. B. FAIR. “MEASUREMENT OF TWO-DIMENSIONAL DIFFUSION PROFILES.” Journal of the Electrochemical Society 134, no. 8B (August 1, 1987): C451–C451.
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    • ROGERS, B., H. Z. MASSOUD, R. B. FAIR, U. M. GOSELE, R. SHAW, H. KORB, and M. GUSE. “POINT-DEFECT KINETICS DURING BACK SIDE OXIDATION MEASURED BY FRONT SIDE STACKING-FAULT GROWTH.” Journal of the Electrochemical Society 134, no. 3 (March 1, 1987): C125–C125.
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    • SUBRAHMANYAN, R., H. Z. MASSOUD, and R. B. FAIR. “CHARACTERIZATION AND MODELING OF THE DIFFUSION OF BORON AND ARSENIC IN SI IN DRY O2/HCL MIXTURES.” Journal of the Electrochemical Society 134, no. 3 (March 1, 1987): C124–25.
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    • Mastrototaro, J. J., H. Z. Massoud, T. C. Pilkington, and R. E. Ideker. “VLSI APPROACH FOR CARDIAC MULTIELECTRODE PROBE FABRICATION.” Ieee/Engineering in Medicine and Biology Society Annual Conference, December 1, 1986, 1603–5.
    • Irene, E. A., H. Z. Massoud, and E. Tierney. “SILICON OXIDATION STUDIES: SILICON ORIENTATION EFFECTS ON THERMAL OXIDATION.” Journal of the Electrochemical Society 133, no. 6 (1986): 1253–56.
    • Manda, M. L., M. L. Shepard, R. B. Fair, and H. Z. Massoud. “STRESS-ASSISTED DIFFUSION OF BORON AND ARSENIC IN SILICON.” Materials Research Society Symposia Proceedings 36 (December 1, 1985): 71–76.
    • Massoud, H. Z. “Thermal Oxidation of Silicon in Dry Oxygen Accurate Determination of the Kinetic Rate Constants.” Journal of the Electrochemical Society 132, no. 7 (January 1, 1985): 1745–53. https://doi.org/10.1149/1.2114204.
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    • Massoud, H. Z., J. D. Plummer, and E. A. Irene. “Thermal Oxidation of Silicon in Dry Oxygen: Growth-Rate Enhancement in the Thin Regime II. Physical Mechanisms.” Journal of the Electrochemical Society 132, no. 11 (January 1, 1985): 2693–2700. https://doi.org/10.1149/1.2113649.
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    • Massoud, H. Z., J. D. Plummer, and E. A. Irene. “Thermal Oxidation of Silicon in Dry Oxygen Growth-Rate Enhancement in the Thin Regime I. Experimental Results.” Journal of the Electrochemical Society 132, no. 11 (January 1, 1985): 2685–93. https://doi.org/10.1149/1.2113648.
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    • Wilson, W. B., H. Z. Massoud, E. J. Swanson, R. T. G. Jr, and R. B. Fair. “MEASUREMENT AND MODELING OF CHARGE FEEDTHROUGH IN N-CHANNEL MOS ANALOG SWITCHES.” Ieee Journal of Solid State Circuits SC-20, no. 6 (1985): 1206–13.
    • Wilson, W. B., H. Z. Massoud, E. J. Swanson, R. T. George, and R. B. Fair. “Measurement and Modeling of Charge Feedthrough in n-Channel MOS Analog Switches.” Ieee Journal of Solid State Circuits 20, no. 6 (January 1, 1985): 1206–13. https://doi.org/10.1109/JSSC.1985.1052460.
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    • Young, D. R., E. A. Irene, D. J. DiMaria, R. F. De Keersmaecker, and H. Z. Massoud. “Electron trapping in SiO2 at 295 and 77 °K.” Journal of Applied Physics 50, no. 10 (December 1, 1979): 6366–72. https://doi.org/10.1063/1.325727.
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    • YOUNG, D. R., E. A. IRENE, D. J. DIMARIA, H. Z. MASSOUD, and R. F. DEKEERSMAECKER. “EFFECTS OF HEAT-TREATMENT ON ELECTRON TRAPPING CHARACTERISTICS OF SIO2 AT 300-DEGREES-K AND 77-DEGREES-K.” Journal of the Electrochemical Society 125, no. 3 (1978): C127–C127.
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  • Conference Papers

    • Ybarra, G. A., L. M. Collins, L. G. Huettel, H. Z. Massoud, J. A. Board, M. Brooke, N. M. Jokerst, et al. “Integrating sensing and information processing in an electrical and computer engineering undergraduate curriculum.” In Proceedings  Frontiers in Education Conference, Fie, 2009. https://doi.org/10.1109/FIE.2009.5350770.
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    • Coonley, K., M. Brooke, P. Ethier, and H. Massoud. “Design of a flexible RF data link and associated laboratory curriculum in a first analog electronics and devices course.” In Asee Annual Conference and Exposition, Conference Proceedings, 2009.
    • Brown, A., G. Ybarra, H. Massoud, J. Board, J. Holmes, K. Coonley, L. Collins, L. Huettel, M. Gustafson, and S. Cummer. “Redesign of the core curriculum at Duke University.” In Asee Annual Conference and Exposition, Conference Proceedings, 2006.
    • Brown, A., G. Ybarra, H. Massoud, J. Board, J. Holmes, K. Coonley, L. Collins, L. Huettel, M. Gustafson, and S. Cummer. “Redesign of the core curriculum at Duke University.” In Asee Annual Conference and Exposition, Conference Proceedings, 2006.
    • Collins, L. M., L. G. Huettel, A. S. Brown, G. A. Ybarra, J. S. Holmes, J. A. Board, S. A. Cummer, M. R. Gustafson, J. Kim, and H. Z. Massoud. “Theme-based redesign of the duke university ECE curriculum: The first steps.” In Asee Annual Conference and Exposition, Conference Proceedings, 14313–26, 2005.
    • Huettel, L., A. Brown, M. Gustafson, H. Massoud, G. Ybarra, and L. Collins. “Work in progress: Theme-based redesign of an electrical and computer engineering curriculum.” In Proceedings  Frontiers in Education Conference, Fie, Vol. 3, 2004.
    • Niimi, H., R. S. Johnson, G. Lucovsky, and H. Z. Massoud. “Electrical performance of stacked high-k gate dielectrics: Remote plasma CVD Ta2O5 and (Ta2O5)(x)(SiO2)(1-x) alloys with ultrathin plasma processed SiO2 interface layers.” In Physics and Chemistry of Sio2 and the Si Sio2 Interface  4, 2000:487–94, 2000.
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    • Shanware, A., H. Z. Massoud, E. Vogel, K. Henson, J. R. Hauser, and J. J. Wortman. “Comparison of valence-band tunneling in pure sio2, composite sio2/ta2o5, and pure ta2o5, in mosfets with 1.0 nm-thick sio2-equivalent gate dielectrics.” In Materials Research Society Symposium  Proceedings, 567:515–20, 1999. https://doi.org/10.1557/proc-567-515.
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    • Massoud, H. Z. “A simple model of the chemical nature of bonds at the Si-SiO2 interface and its influence on the electronic properties of MOS devices.” In Fundamental Aspects of Ultrathin Dielectrics on Si Based Devices, edited by E. Garfunkel, E. Gusev, and A. Vul, 47:103–16. SPRINGER, 1998.
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    • Massoud, H. Z., and A. Ishitani. “Dielectrics, interfaces, and epitaxy.” In Silicon Materials Science and Technology, Vols 1 and 2, edited by H. R. Huff, H. Tsuya, and U. Gosele, 727–29. ELECTROCHEMICAL SOCIETY INC, 1998.
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    • Massoud, H. Z. “Ellipsometry-based process monitoring and control for ultrathin gate dielectrics.” In Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, edited by M. J. Deen, W. D. Brown, K. B. Sundaram, and S. I. Raider, 97:208–16. ELECTROCHEMICAL SOCIETY INC, 1997.
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    • Thees, H. J., C. M. Osburn, J. P. Shiely, and H. Z. Massoud. “Wear-out and stress-induced leakage current of ultrathin gate oxides.” In Physics and Chemistry of Sio(2) and the Si Sio(2) Interface 3, 1996, 96:677–86, 1996.
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    • MASSOUD, H. Z., and S. I. RAIDER. “DEPOSITION AND PROPERTIES OF SIO2 - INTRODUCTION.” In Physics and Chemistry of Sio2 and the Si Si0 2 Interface 2, edited by C. R. Helms and B. E. Deal, 117–18. PLENUM PRESS DIV PLENUM PUBLISHING CORP, 1993.
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    • DEATON, R., and H. Z. MASSOUD. “RESPONSE-SURFACE ANALYSIS OF THE RAPID THERMAL-OXIDATION OF SILICON.” In Rapid Thermal and Integrated Processing, 224:373–78, 1991.
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    • Massoud, Hisham Z., Ronald K. Sampson, Kevin A. Conrad, Yao-Zhi Hu, and Eugene A. Irene. “Applications of In Situ Ellipsometry in RTP Temperature Measurement and Process Control.” In Mrs Proceedings, Vol. 224. Cambridge University Press (CUP), 1991. https://doi.org/10.1557/proc-224-17.
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• Teaching & Mentoring
• 

  Recent Courses

  • ECE 230L: Introduction to Microelectronic Devices and Circuits 2020
  • ECE 331L: Fundamentals of Microelectronic Circuits 2020
  • ECE 526: Semiconductor Devices for Integrated Circuits 2020
  • ECE 529: Digital Integrated Circuits 2020
• Scholarly, Clinical, & Service Activities
• 

  Service to the Profession

  • General Chair and Program Chair. IEEE Interface Specialists Conference. IEEE Electron Device Society. 1992 - 1994  1992 - 1994

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