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The onset of the thermal oxidation of silicon from room temperature to 1000°C

Publication ,  Journal Article
Massoud, HZ
Published in: Microelectronic Engineering
January 1, 1995

This paper presents experimental results of the onset of SiO2 growth at high temperatures ranging from 800 to 1000°C, and reviews observations made on the intitial stages of silicon oxidation at low temperatures ranging from 300 to 700°C, and native-oxide growth at room temperature. An incubation period of duration TD, during which the oxide does not grow at the onset of oxidation at all temperatures, is observed. The dependence of the delay TD on substrate orientation, doping, and oxidation temperature is summarized. A model exploring the influence of SiO formation at the onset of the thermal oxidation of silicon at high temperatures in dry oxygen on the passive-to-active oxidation transition is presented. © 1995.

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Published In

Microelectronic Engineering

DOI

ISSN

0167-9317

Publication Date

January 1, 1995

Volume

28

Issue

1-4

Start / End Page

109 / 116

Related Subject Headings

  • Applied Physics
  • 4016 Materials engineering
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
  • 0299 Other Physical Sciences
  • 0204 Condensed Matter Physics
 

Citation

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Massoud, H. Z. (1995). The onset of the thermal oxidation of silicon from room temperature to 1000°C. Microelectronic Engineering, 28(1–4), 109–116. https://doi.org/10.1016/0167-9317(95)00026-5
Massoud, H. Z. “The onset of the thermal oxidation of silicon from room temperature to 1000°C.” Microelectronic Engineering 28, no. 1–4 (January 1, 1995): 109–16. https://doi.org/10.1016/0167-9317(95)00026-5.
Massoud HZ. The onset of the thermal oxidation of silicon from room temperature to 1000°C. Microelectronic Engineering. 1995 Jan 1;28(1–4):109–16.
Massoud, H. Z. “The onset of the thermal oxidation of silicon from room temperature to 1000°C.” Microelectronic Engineering, vol. 28, no. 1–4, Jan. 1995, pp. 109–16. Scopus, doi:10.1016/0167-9317(95)00026-5.
Massoud HZ. The onset of the thermal oxidation of silicon from room temperature to 1000°C. Microelectronic Engineering. 1995 Jan 1;28(1–4):109–116.
Journal cover image

Published In

Microelectronic Engineering

DOI

ISSN

0167-9317

Publication Date

January 1, 1995

Volume

28

Issue

1-4

Start / End Page

109 / 116

Related Subject Headings

  • Applied Physics
  • 4016 Materials engineering
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
  • 0299 Other Physical Sciences
  • 0204 Condensed Matter Physics