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Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions

Publication ,  Journal Article
De Lyon, TJ; Casey, HC; Massoud, HZ; Timmons, ML; Hutchby, JA; Dietrich, HB
Published in: Applied Physics Letters
January 1, 1988

Planar, Be-implanted p-n junctions were fabricated in GaAs with rapid thermal annealing (RTA). Five second isochronal anneals over a temperature range of 600-1000°C were studied with secondary ion mass spectrometry (SIMS), sheet resistance measurements, and variable diameter p-n junctions. Sheet resistance measurements indicate that a minimum RTA temperature of 600°C is necessary for electrical activation of the implanted Be. SIMS analysis indicates that significant outdiffusion and surface evaporation of Be occur at all RTA temperatures in this range, while indiffusion of Be is insignificant for concentrations below 1×1018 cm-3. Forward bias current in diodes ranging in diameter from 10 to 1000 μm is dominated by surface recombination, rather than bulk space-charge recombination, over the entire 600-1000°C temperature range. The magnitude of the surface recombination current is insensitive to the RTA temperature, which suggests that 600°C RTA should be sufficient for the formation of satisfactory p-n junctions.

Duke Scholars

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

January 1, 1988

Volume

52

Issue

26

Start / End Page

2244 / 2246

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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De Lyon, T. J., Casey, H. C., Massoud, H. Z., Timmons, M. L., Hutchby, J. A., & Dietrich, H. B. (1988). Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions. Applied Physics Letters, 52(26), 2244–2246. https://doi.org/10.1063/1.99544
De Lyon, T. J., H. C. Casey, H. Z. Massoud, M. L. Timmons, J. A. Hutchby, and H. B. Dietrich. “Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions.” Applied Physics Letters 52, no. 26 (January 1, 1988): 2244–46. https://doi.org/10.1063/1.99544.
De Lyon TJ, Casey HC, Massoud HZ, Timmons ML, Hutchby JA, Dietrich HB. Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions. Applied Physics Letters. 1988 Jan 1;52(26):2244–6.
De Lyon, T. J., et al. “Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions.” Applied Physics Letters, vol. 52, no. 26, Jan. 1988, pp. 2244–46. Scopus, doi:10.1063/1.99544.
De Lyon TJ, Casey HC, Massoud HZ, Timmons ML, Hutchby JA, Dietrich HB. Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions. Applied Physics Letters. 1988 Jan 1;52(26):2244–2246.

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

January 1, 1988

Volume

52

Issue

26

Start / End Page

2244 / 2246

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences