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Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal-oxide-semiconductor devices

Publication ,  Journal Article
Massoud, HZ; Przewlocki, HM
Published in: Journal of Applied Physics
August 15, 2002

In this article, we report the results of a study of the effects of high-temperature stress annealing in nitrogen on the index of refraction of SiO 2 layers in metal/oxide/semiconductor (MOS) devices. In this study, we have experimentally characterized the dependence of mechanical stress in the Si-SiO 2 system on the oxidation and annealing conditions and correlated such properties with the dependence of the index of refraction on processing conditions and oxide thickness. We consider the contributions of the thermal-relaxation and nitrogen-incorporation processes in determining changes in the index of refraction with annealing time. This description is consistent with other annealing studies carried out in argon where only the thermal-relaxation process is present. Correlations of these experimental observations with the electrical properties of the same MOS devices are presented in a companion article. © 2002 American Institute of Physics.

Duke Scholars

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

August 15, 2002

Volume

92

Issue

4

Start / End Page

2202 / 2206

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

Citation

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Massoud, H. Z., & Przewlocki, H. M. (2002). Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal-oxide-semiconductor devices. Journal of Applied Physics, 92(4), 2202–2206. https://doi.org/10.1063/1.1489500
Massoud, H. Z., and H. M. Przewlocki. “Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal-oxide-semiconductor devices.” Journal of Applied Physics 92, no. 4 (August 15, 2002): 2202–6. https://doi.org/10.1063/1.1489500.
Massoud, H. Z., and H. M. Przewlocki. “Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal-oxide-semiconductor devices.” Journal of Applied Physics, vol. 92, no. 4, Aug. 2002, pp. 2202–06. Scopus, doi:10.1063/1.1489500.
Massoud HZ, Przewlocki HM. Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal-oxide-semiconductor devices. Journal of Applied Physics. 2002 Aug 15;92(4):2202–2206.
Journal cover image

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

August 15, 2002

Volume

92

Issue

4

Start / End Page

2202 / 2206

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences