Determination of the Kinetic Coefficients of Silicon Self-Interstitials from Back-Side Oxidation/Front-Surface Stacking-Fault Growth Experiments
A series of back-side oxidation/front-side stacking-fault growth experiments have been carried out to determine the kinetic coefficients of self-interstitials in silicon. In these experiments, wet and dry oxidations of the back side of thinned silicon samples were used to inject self-interstitials from the back surfaces. The sample front surfaces were capped with oxide or nitride layers, and the concentration of self-interstitials at the capped surfaces were monitored by the growth or shrinkage of surface stacking faults. Experimental results have been analyzed using steady-state and transient models, based on the assumption that self-interstitials dominate the kinetic processes of intrinsic point defects. From these analyses, the relative recombination rates of self-interstitials at oxide and nitride boundary layers have been obtained, with an oxide layer found to absorb self-interstitials at about three times the rate of a nitride layer. The results also suggest that the surface recombination coefficients are time dependent rather than constant, as has been previously assumed. © 1991, The Electrochemical Society, Inc. All rights reserved.
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- Energy
- 4016 Materials engineering
- 3406 Physical chemistry
- 0912 Materials Engineering
- 0306 Physical Chemistry (incl. Structural)
- 0303 Macromolecular and Materials Chemistry
Citation
Published In
DOI
EISSN
ISSN
Publication Date
Volume
Issue
Start / End Page
Related Subject Headings
- Energy
- 4016 Materials engineering
- 3406 Physical chemistry
- 0912 Materials Engineering
- 0306 Physical Chemistry (incl. Structural)
- 0303 Macromolecular and Materials Chemistry