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Ellipsometric monitoring and control of the rapid thermal oxidation of silicon

Publication ,  Journal Article
Conrad, KA; Sampson, RK; Massoud, HZ; Irene, EA
Published in: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
November 1, 1993
Published version (DOI) Publisher Link

Single wavelength ellipsometry is demonstrated for in situ process monitoring and control in a rapid thermal processing system. Simultaneous in situ ellipsometric measurements of the temperature and oxide film thickness allow closed-loop feedback control during film growth. Data are presented for the rapid thermal oxidation of silicon under computer control for oxide thickness ranging from 60 to 175 Å and temperatures from 850 to 1000 °C.

Duke Scholars

Hisham Z. Massoud
Author Hisham Z. Massoud Electrical and Computer Engineering
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Published In

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

DOI

10.1116/1.586548

EISSN

1520-8567

ISSN

1071-1023

Publication Date

November 1, 1993

Volume

11

Issue

6

Start / End Page

2096 / 2101

Publisher

American Vacuum Society

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences
 

Citation

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Conrad, K. A., Sampson, R. K., Massoud, H. Z., & Irene, E. A. (1993). Ellipsometric monitoring and control of the rapid thermal oxidation of silicon. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 11(6), 2096–2101. https://doi.org/10.1116/1.586548
Conrad, K. A., R. K. Sampson, H. Z. Massoud, and E. A. Irene. “Ellipsometric monitoring and control of the rapid thermal oxidation of silicon.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 11, no. 6 (November 1, 1993): 2096–2101. https://doi.org/10.1116/1.586548.
Conrad KA, Sampson RK, Massoud HZ, Irene EA. Ellipsometric monitoring and control of the rapid thermal oxidation of silicon. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena. 1993 Nov 1;11(6):2096–101.
Conrad, K. A., et al. “Ellipsometric monitoring and control of the rapid thermal oxidation of silicon.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 11, no. 6, American Vacuum Society, Nov. 1993, pp. 2096–101. Crossref, doi:10.1116/1.586548.
Conrad KA, Sampson RK, Massoud HZ, Irene EA. Ellipsometric monitoring and control of the rapid thermal oxidation of silicon. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena. American Vacuum Society; 1993 Nov 1;11(6):2096–2101.

Published In

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

DOI

10.1116/1.586548

EISSN

1520-8567

ISSN

1071-1023

Publication Date

November 1, 1993

Volume

11

Issue

6

Start / End Page

2096 / 2101

Publisher

American Vacuum Society

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences