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C-V measurement and simulation of silicon-insulator-silicon (SIS) structures for analyzing charges in buried oxides of bonded SOI materials

Publication ,  Journal Article
Mitani, K; Massoud, HZ
Published in: IEICE Trans. Electron. (Japan)
1992

Charges in buried oxide layers formed by wafer bonding were evaluated by capacitance-voltage (C-V) measurements. In this study, silicon-insulator-silicon (SIS) and metal-oxide-silicon (MOS) capacitors were fabricated on bonded wafers. For analyzing C-V curves of SIS structures, C-V simulation programs were developed. From the analysis, the authors concludes that approximately 2×1011/cm2 negative charges were distributed uniformly in the oxide. The effect of the experimental conditions during wafer bonding on generated charges in buried oxides is also discussed

Duke Scholars

Hisham Z. Massoud
Author Hisham Z. Massoud Electrical and Computer Engineering

Published In

IEICE Trans. Electron. (Japan)

Publication Date

1992

Volume

E75-C

Issue

12

Start / End Page

1421 / 1429
 

Citation

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Mitani, K., & Massoud, H. Z. (1992). C-V measurement and simulation of silicon-insulator-silicon (SIS) structures for analyzing charges in buried oxides of bonded SOI materials. IEICE Trans. Electron. (Japan), E75-C(12), 1421–1429.
Mitani, K., and H. Z. Massoud. “C-V measurement and simulation of silicon-insulator-silicon (SIS) structures for analyzing charges in buried oxides of bonded SOI materials.” IEICE Trans. Electron. (Japan) E75-C, no. 12 (1992): 1421–29.
Mitani, K., and H. Z. Massoud. “C-V measurement and simulation of silicon-insulator-silicon (SIS) structures for analyzing charges in buried oxides of bonded SOI materials.” IEICE Trans. Electron. (Japan), vol. E75-C, no. 12, 1992, pp. 1421–29.

Published In

IEICE Trans. Electron. (Japan)

Publication Date

1992

Volume

E75-C

Issue

12

Start / End Page

1421 / 1429