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The role of substrate carrier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Norheim tunneling regime

Publication ,  Journal Article
Massoud, HZ; Shiely, JP
Published in: Microelectronic Engineering
January 1, 1997

This paper investigates the role of substrate carrier generation in determining the field, potential, and carrier distributions in MOS capacitors biased in the Fowler-Nordheim tunneling regime. We focus especially on the oxide electric field obtained under nonequilibrium conditions. We find that it is significantly reduced from its value in thermal equilibrium at the same gate-to-bulk voltage. The dependence of the reduction in the oxide field on the carrier lifetime in the substrate was determined from device simulations.

Duke Scholars

Published In

Microelectronic Engineering

DOI

ISSN

0167-9317

Publication Date

January 1, 1997

Volume

36

Issue

1-4

Start / End Page

263 / 266

Related Subject Headings

  • Applied Physics
  • 4016 Materials engineering
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
  • 0299 Other Physical Sciences
  • 0204 Condensed Matter Physics
 

Citation

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ICMJE
MLA
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Massoud, H. Z., & Shiely, J. P. (1997). The role of substrate carrier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Norheim tunneling regime. Microelectronic Engineering, 36(1–4), 263–266. https://doi.org/10.1016/S0167-9317(97)00060-9
Massoud, H. Z., and J. P. Shiely. “The role of substrate carrier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Norheim tunneling regime.” Microelectronic Engineering 36, no. 1–4 (January 1, 1997): 263–66. https://doi.org/10.1016/S0167-9317(97)00060-9.
Massoud, H. Z., and J. P. Shiely. “The role of substrate carrier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Norheim tunneling regime.” Microelectronic Engineering, vol. 36, no. 1–4, Jan. 1997, pp. 263–66. Scopus, doi:10.1016/S0167-9317(97)00060-9.
Journal cover image

Published In

Microelectronic Engineering

DOI

ISSN

0167-9317

Publication Date

January 1, 1997

Volume

36

Issue

1-4

Start / End Page

263 / 266

Related Subject Headings

  • Applied Physics
  • 4016 Materials engineering
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
  • 0299 Other Physical Sciences
  • 0204 Condensed Matter Physics