The role of substrate carrier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Norheim tunneling regime
Publication
, Journal Article
Massoud, HZ; Shiely, JP
Published in: Microelectronic Engineering
January 1, 1997
This paper investigates the role of substrate carrier generation in determining the field, potential, and carrier distributions in MOS capacitors biased in the Fowler-Nordheim tunneling regime. We focus especially on the oxide electric field obtained under nonequilibrium conditions. We find that it is significantly reduced from its value in thermal equilibrium at the same gate-to-bulk voltage. The dependence of the reduction in the oxide field on the carrier lifetime in the substrate was determined from device simulations.
Duke Scholars
Published In
Microelectronic Engineering
DOI
ISSN
0167-9317
Publication Date
January 1, 1997
Volume
36
Issue
1-4
Start / End Page
263 / 266
Related Subject Headings
- Applied Physics
- 4016 Materials engineering
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
- 0299 Other Physical Sciences
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Massoud, H. Z., & Shiely, J. P. (1997). The role of substrate carrier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Norheim tunneling regime. Microelectronic Engineering, 36(1–4), 263–266. https://doi.org/10.1016/S0167-9317(97)00060-9
Massoud, H. Z., and J. P. Shiely. “The role of substrate carrier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Norheim tunneling regime.” Microelectronic Engineering 36, no. 1–4 (January 1, 1997): 263–66. https://doi.org/10.1016/S0167-9317(97)00060-9.
Massoud HZ, Shiely JP. The role of substrate carrier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Norheim tunneling regime. Microelectronic Engineering. 1997 Jan 1;36(1–4):263–6.
Massoud, H. Z., and J. P. Shiely. “The role of substrate carrier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Norheim tunneling regime.” Microelectronic Engineering, vol. 36, no. 1–4, Jan. 1997, pp. 263–66. Scopus, doi:10.1016/S0167-9317(97)00060-9.
Massoud HZ, Shiely JP. The role of substrate carrier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Norheim tunneling regime. Microelectronic Engineering. 1997 Jan 1;36(1–4):263–266.
Published In
Microelectronic Engineering
DOI
ISSN
0167-9317
Publication Date
January 1, 1997
Volume
36
Issue
1-4
Start / End Page
263 / 266
Related Subject Headings
- Applied Physics
- 4016 Materials engineering
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
- 0299 Other Physical Sciences
- 0204 Condensed Matter Physics