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InGaAs MSM Photodetectors Modeling Using DOE Analysis

Publication ,  Journal Article
Huang, Z; Cha, C; Chen, S; Sarmiento, T; Shen, JJ; Jokerst, NM; Brooke, MA; May, G; Brown, AS
Published in: Proceedings of SPIE - The International Society for Optical Engineering
2004

Linear statistical models have been generated to predict the performance of metal-semiconductor-metal (MSM) PDs for multi-gigabit optical interconnections. The models estimate the bandwidth and responsivity of the MSM PDs based on the input factors: absorbing layer thickness, detector size, finger widths and finger gaps. The design of experiments (DOE) approach was employed to obtain the necessary data to construct the models. Numerous samples were fabricated so that multiple devices measurements could serve to both construct and verify the linear statistical models. The MSM PDs were fabricated from material with structure InAlAs/InAlGaAs/InGaAs (2000A, 3000A or 5000A, absorbing layer)/InAlAs. The MSM interdigitated fingers were photolithographically defined with finger gaps and widths varying as DOE parameters. A benzocyclobutene (BCB, Cyclotene 35) layer was spin-coated onto all of the samples as isolation from the probing pads. In the bandwidth analysis, the detector size (S) and material thickness (T) were investigated with a fixed finger width (1 μm) and gap (1 μm). Taking the measured results of these detectors in the design matrix, and using least square regression, the model equations were derived as: Bandwidth (GHz) = 12.87 - 0.065S - 3T - 0.02ST. After these equations were developed, predictive calculated results from these equations were then further used to predict and compare measured results on devices that were not used in the statistical model. This leads to an average deviation between predicted and measured bandwidth of less than 5%. In the responsivity analysis, the predictive calculation leads to an average deviation less than 11%.

Duke Scholars

Published In

Proceedings of SPIE - The International Society for Optical Engineering

DOI

Publication Date

2004

Volume

5178

Start / End Page

148 / 155

Location

San Diego, CA, United States

Related Subject Headings

  • 5102 Atomic, molecular and optical physics
  • 4009 Electronics, sensors and digital hardware
  • 4006 Communications engineering
 

Citation

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Huang, Z., Cha, C., Chen, S., Sarmiento, T., Shen, J. J., Jokerst, N. M., … Brown, A. S. (2004). InGaAs MSM Photodetectors Modeling Using DOE Analysis. Proceedings of SPIE - The International Society for Optical Engineering, 5178, 148–155. https://doi.org/10.1117/12.507337
Huang, Zhaoran, Cheolung Cha, Shuodan Chen, Tomas Sarmiento, J. J. Shen, Nan M. Jokerst, Martin A. Brooke, Gary May, and April S. Brown. “InGaAs MSM Photodetectors Modeling Using DOE Analysis.” Proceedings of SPIE - The International Society for Optical Engineering 5178 (2004): 148–55. https://doi.org/10.1117/12.507337.
Huang Z, Cha C, Chen S, Sarmiento T, Shen JJ, Jokerst NM, et al. InGaAs MSM Photodetectors Modeling Using DOE Analysis. Proceedings of SPIE - The International Society for Optical Engineering. 2004;5178:148–55.
Huang, Zhaoran, et al. “InGaAs MSM Photodetectors Modeling Using DOE Analysis.” Proceedings of SPIE - The International Society for Optical Engineering, vol. 5178, 2004, pp. 148–55. Manual, doi:10.1117/12.507337.
Huang Z, Cha C, Chen S, Sarmiento T, Shen JJ, Jokerst NM, Brooke MA, May G, Brown AS. InGaAs MSM Photodetectors Modeling Using DOE Analysis. Proceedings of SPIE - The International Society for Optical Engineering. 2004;5178:148–155.

Published In

Proceedings of SPIE - The International Society for Optical Engineering

DOI

Publication Date

2004

Volume

5178

Start / End Page

148 / 155

Location

San Diego, CA, United States

Related Subject Headings

  • 5102 Atomic, molecular and optical physics
  • 4009 Electronics, sensors and digital hardware
  • 4006 Communications engineering