The heterogeneous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon
Publication
, Journal Article
Seo, S; Lee, KK; Kang, S; Huang, S; Doolittle, WA; Jokerst, NM; Brown, AS; Brooke, MA
Published in: IEEE Photonics Technology Letters
February 1, 2002
The heterogeneous integration of GaN thin-film metal-semiconductor-metal (MSM) photodetectors onto a host substrate of SiO2-Si is reported herein. Thin-film GaN photodetectors were separated from the lithium gallate (LiGaO2) growth substrate using selective etching, and contact bonded onto an SiO2-Si host substrate. The thin-film MSMs exhibited a dark current of 13.36 pA and an UV photoresponse at 308 nm of 0.11 A/W at a reverse bias voltage of 20 V. This first demonstration of GaN thin-film device integration onto SiO2-Si using a low-temperature integration process, combined with the advances in GaN material quality on LiGaO2 substrates, enables the integration of GaN devices with Si circuitry for heterogeneously integrated systems.
Duke Scholars
Published In
IEEE Photonics Technology Letters
DOI
ISSN
1041-1135
Publication Date
February 1, 2002
Volume
14
Issue
2
Start / End Page
185 / 187
Related Subject Headings
- Optoelectronics & Photonics
- 5102 Atomic, molecular and optical physics
- 4006 Communications engineering
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Seo, S., Lee, K. K., Kang, S., Huang, S., Doolittle, W. A., Jokerst, N. M., … Brooke, M. A. (2002). The heterogeneous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon. IEEE Photonics Technology Letters, 14(2), 185–187. https://doi.org/10.1109/68.980507
Seo, S., K. K. Lee, S. Kang, S. Huang, W. A. Doolittle, N. M. Jokerst, A. S. Brown, and M. A. Brooke. “The heterogeneous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon.” IEEE Photonics Technology Letters 14, no. 2 (February 1, 2002): 185–87. https://doi.org/10.1109/68.980507.
Seo S, Lee KK, Kang S, Huang S, Doolittle WA, Jokerst NM, et al. The heterogeneous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon. IEEE Photonics Technology Letters. 2002 Feb 1;14(2):185–7.
Seo, S., et al. “The heterogeneous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon.” IEEE Photonics Technology Letters, vol. 14, no. 2, Feb. 2002, pp. 185–87. Scopus, doi:10.1109/68.980507.
Seo S, Lee KK, Kang S, Huang S, Doolittle WA, Jokerst NM, Brown AS, Brooke MA. The heterogeneous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon. IEEE Photonics Technology Letters. 2002 Feb 1;14(2):185–187.
Published In
IEEE Photonics Technology Letters
DOI
ISSN
1041-1135
Publication Date
February 1, 2002
Volume
14
Issue
2
Start / End Page
185 / 187
Related Subject Headings
- Optoelectronics & Photonics
- 5102 Atomic, molecular and optical physics
- 4006 Communications engineering
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics