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High-speed large-area inverted InGaAs thin-film metal-semiconductor-metal photodetectors

Publication ,  Journal Article
Seo, SW; Jokerst, NM; Cho, SY; Brown, AS; Huang, S; Shin, JJ; Brooke, MA
Published in: IEEE Journal on Selected Topics in Quantum Electronics
July 1, 2004

Inverted metal-semiconductor-metal (I-MSM) photodetectors, which are thin-film MSMs with the growth substrate removed and fingers on the bottom of the device (to eliminate finger shadowing to enhance responsivity), are reported herein for high-speed high-efficiency large-area photodetectors. Reported herein are the highest speed vertically addressed large-area (40-μm diameter) photodetectors reported to date, which operate with a responsivity of 0.16 A/W and a full-width half-maximum of less than 5 ps. Materials, fabrication processes, heterogeneous integration, and characterization of I-MSM photodetectors are presented in this paper, as measured using a fiber-based electrooptic sampling system. These large-area photodetectors are ideal for vertically addressed high-speed optical links which need alignment-tolerant packaging for cost sensitive applications.

Duke Scholars

Published In

IEEE Journal on Selected Topics in Quantum Electronics

DOI

ISSN

1077-260X

Publication Date

July 1, 2004

Volume

10

Issue

4

Start / End Page

686 / 693

Related Subject Headings

  • Optoelectronics & Photonics
  • 5102 Atomic, molecular and optical physics
  • 4009 Electronics, sensors and digital hardware
  • 4008 Electrical engineering
  • 0906 Electrical and Electronic Engineering
  • 0206 Quantum Physics
  • 0205 Optical Physics
 

Citation

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Seo, S. W., Jokerst, N. M., Cho, S. Y., Brown, A. S., Huang, S., Shin, J. J., & Brooke, M. A. (2004). High-speed large-area inverted InGaAs thin-film metal-semiconductor-metal photodetectors. IEEE Journal on Selected Topics in Quantum Electronics, 10(4), 686–693. https://doi.org/10.1109/JSTQE.2004.831677
Seo, S. W., N. M. Jokerst, S. Y. Cho, A. S. Brown, S. Huang, J. J. Shin, and M. A. Brooke. “High-speed large-area inverted InGaAs thin-film metal-semiconductor-metal photodetectors.” IEEE Journal on Selected Topics in Quantum Electronics 10, no. 4 (July 1, 2004): 686–93. https://doi.org/10.1109/JSTQE.2004.831677.
Seo SW, Jokerst NM, Cho SY, Brown AS, Huang S, Shin JJ, et al. High-speed large-area inverted InGaAs thin-film metal-semiconductor-metal photodetectors. IEEE Journal on Selected Topics in Quantum Electronics. 2004 Jul 1;10(4):686–93.
Seo, S. W., et al. “High-speed large-area inverted InGaAs thin-film metal-semiconductor-metal photodetectors.” IEEE Journal on Selected Topics in Quantum Electronics, vol. 10, no. 4, July 2004, pp. 686–93. Scopus, doi:10.1109/JSTQE.2004.831677.
Seo SW, Jokerst NM, Cho SY, Brown AS, Huang S, Shin JJ, Brooke MA. High-speed large-area inverted InGaAs thin-film metal-semiconductor-metal photodetectors. IEEE Journal on Selected Topics in Quantum Electronics. 2004 Jul 1;10(4):686–693.

Published In

IEEE Journal on Selected Topics in Quantum Electronics

DOI

ISSN

1077-260X

Publication Date

July 1, 2004

Volume

10

Issue

4

Start / End Page

686 / 693

Related Subject Headings

  • Optoelectronics & Photonics
  • 5102 Atomic, molecular and optical physics
  • 4009 Electronics, sensors and digital hardware
  • 4008 Electrical engineering
  • 0906 Electrical and Electronic Engineering
  • 0206 Quantum Physics
  • 0205 Optical Physics