High-speed large-area inverted InGaAs thin-film metal-semiconductor-metal photodetectors
Inverted metal-semiconductor-metal (I-MSM) photodetectors, which are thin-film MSMs with the growth substrate removed and fingers on the bottom of the device (to eliminate finger shadowing to enhance responsivity), are reported herein for high-speed high-efficiency large-area photodetectors. Reported herein are the highest speed vertically addressed large-area (40-μm diameter) photodetectors reported to date, which operate with a responsivity of 0.16 A/W and a full-width half-maximum of less than 5 ps. Materials, fabrication processes, heterogeneous integration, and characterization of I-MSM photodetectors are presented in this paper, as measured using a fiber-based electrooptic sampling system. These large-area photodetectors are ideal for vertically addressed high-speed optical links which need alignment-tolerant packaging for cost sensitive applications.
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Related Subject Headings
- Optoelectronics & Photonics
- 5102 Atomic, molecular and optical physics
- 4009 Electronics, sensors and digital hardware
- 4008 Electrical engineering
- 0906 Electrical and Electronic Engineering
- 0206 Quantum Physics
- 0205 Optical Physics
Citation
Published In
DOI
ISSN
Publication Date
Volume
Issue
Start / End Page
Related Subject Headings
- Optoelectronics & Photonics
- 5102 Atomic, molecular and optical physics
- 4009 Electronics, sensors and digital hardware
- 4008 Electrical engineering
- 0906 Electrical and Electronic Engineering
- 0206 Quantum Physics
- 0205 Optical Physics