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Analysis of GaAs substrate removal etching with citric acid:H2O2 and NH4OH:H2O2 for application to compliant substrates

Publication ,  Journal Article
Carter-Coman, C; Bicknell-Tassius, R; Benz, RG; Brown, AS; Jokerst, NM
Published in: Journal of the Electrochemical Society
January 1, 1997
Published version (DOI)

New properties associated with selective substrate removal have been observed in the application of this technique to GaAs thin film compliant substrates. Citric acid- and NH4OH-based etches are used to selectively etch the GaAs substrate and stop on an AlAs layer. The AlAs stop-etch layer is transformed into a layer that is almost twice as thick as the original layer, mismatched to the remaining GaAs epilayer, and has a refractive index around 2.0. Replacement of the single AlAs stop etch layer with multiple thin AlGaAs stop etch layers is proposed to alleviate this problem.

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering
Nan Marie Jokerst
Author Nan Marie Jokerst Electrical and Computer Engineering

Published In

Journal of the Electrochemical Society

DOI

10.1149/1.1837422

ISSN

0013-4651

Publication Date

January 1, 1997

Volume

144

Issue

2

Start / End Page

L29 / L31

Related Subject Headings

  • Energy
  • 4016 Materials engineering
  • 3406 Physical chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry
 

Citation

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Carter-Coman, C., Bicknell-Tassius, R., Benz, R. G., Brown, A. S., & Jokerst, N. M. (1997). Analysis of GaAs substrate removal etching with citric acid:H2O2 and NH4OH:H2O2 for application to compliant substrates. Journal of the Electrochemical Society, 144(2), L29–L31. https://doi.org/10.1149/1.1837422
Carter-Coman, C., R. Bicknell-Tassius, R. G. Benz, A. S. Brown, and N. M. Jokerst. “Analysis of GaAs substrate removal etching with citric acid:H2O2 and NH4OH:H2O2 for application to compliant substrates.” Journal of the Electrochemical Society 144, no. 2 (January 1, 1997): L29–31. https://doi.org/10.1149/1.1837422.
Carter-Coman C, Bicknell-Tassius R, Benz RG, Brown AS, Jokerst NM. Analysis of GaAs substrate removal etching with citric acid:H2O2 and NH4OH:H2O2 for application to compliant substrates. Journal of the Electrochemical Society. 1997 Jan 1;144(2):L29–31.
Carter-Coman, C., et al. “Analysis of GaAs substrate removal etching with citric acid:H2O2 and NH4OH:H2O2 for application to compliant substrates.” Journal of the Electrochemical Society, vol. 144, no. 2, Jan. 1997, pp. L29–31. Scopus, doi:10.1149/1.1837422.
Carter-Coman C, Bicknell-Tassius R, Benz RG, Brown AS, Jokerst NM. Analysis of GaAs substrate removal etching with citric acid:H2O2 and NH4OH:H2O2 for application to compliant substrates. Journal of the Electrochemical Society. 1997 Jan 1;144(2):L29–L31.

Published In

Journal of the Electrochemical Society

DOI

10.1149/1.1837422

ISSN

0013-4651

Publication Date

January 1, 1997

Volume

144

Issue

2

Start / End Page

L29 / L31

Related Subject Headings

  • Energy
  • 4016 Materials engineering
  • 3406 Physical chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry