GaN metal-semiconductor-metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy
Publication
, Journal Article
Seo, SW; Lee, KK; Kang, S; Huang, S; Doolittle, WA; Jokerst, NM; Brown, AS
Published in: Applied Physics Letters
August 27, 2001
The growth, fabrication, and characterization of ultraviolet metal-semiconductor-metal (MSM) GaN photodetectors grown on LiGaO2 by molecular-beam epitaxy are reported herein. GaN/LiGaO2 material with dislocation densities of approximately 108 cm-2 and x-ray diffraction (00.4) full width at half maximum of 75 arcsec results in MSMs showing high responsivity, 0.105 A/W, at a reverse bias voltage of 20 V at 308 nm, and low dark currents of 7.88 pA at a 60 V reverse bias. Given the etch selectivity of the GaN/LiGaO2 system and the excellent performance of these devices, GaN device integration onto alternative substrates appears promising. © 2001 American Institute of Physics.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
August 27, 2001
Volume
79
Issue
9
Start / End Page
1372 / 1374
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
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Seo, S. W., Lee, K. K., Kang, S., Huang, S., Doolittle, W. A., Jokerst, N. M., & Brown, A. S. (2001). GaN metal-semiconductor-metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy. Applied Physics Letters, 79(9), 1372–1374. https://doi.org/10.1063/1.1398320
Seo, S. W., K. K. Lee, S. Kang, S. Huang, W. A. Doolittle, N. M. Jokerst, and A. S. Brown. “GaN metal-semiconductor-metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy.” Applied Physics Letters 79, no. 9 (August 27, 2001): 1372–74. https://doi.org/10.1063/1.1398320.
Seo SW, Lee KK, Kang S, Huang S, Doolittle WA, Jokerst NM, et al. GaN metal-semiconductor-metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy. Applied Physics Letters. 2001 Aug 27;79(9):1372–4.
Seo, S. W., et al. “GaN metal-semiconductor-metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy.” Applied Physics Letters, vol. 79, no. 9, Aug. 2001, pp. 1372–74. Scopus, doi:10.1063/1.1398320.
Seo SW, Lee KK, Kang S, Huang S, Doolittle WA, Jokerst NM, Brown AS. GaN metal-semiconductor-metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy. Applied Physics Letters. 2001 Aug 27;79(9):1372–1374.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
August 27, 2001
Volume
79
Issue
9
Start / End Page
1372 / 1374
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences