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Growth dynamics of InGaAs/GaAs by MBE

Publication ,  Journal Article
Fournier, F; Metzger, RA; Doolittle, A; Brown, AS; Carter-Coman, C; Jokerst, NM; Bicknell-Tassius, R
Published in: Journal of Crystal Growth
January 1, 1997
Published version (DOI)

The growth dynamics of the InGaAs/GaAs system have been investigated by desorption mass spectrometry (DMS). Indium desorption spectra indicate the presence of one or two desorption mechanisms depending on the V/III beam equivalent pressure ratio. The activation energy associated with one of the desorption processes is found to be 1.3 e V and independent of V/III ratio and arsenic species. Analysis of the decay curve allows the calculation of the indium surface population during growth. This population is compared for the different growth conditions investigated. Indium incorporation coefficient curves as a function of substrate temperature are presented. Indium incorporation is found to be enhanced using high V/III ratio and the arsenic dimer, As2.

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering
Nan Marie Jokerst
Author Nan Marie Jokerst Electrical and Computer Engineering

Published In

Journal of Crystal Growth

DOI

10.1016/S0022-0248(96)00888-3

ISSN

0022-0248

Publication Date

January 1, 1997

Volume

175-176

Issue

PART 1

Start / End Page

203 / 210

Related Subject Headings

  • Applied Physics
  • 4016 Materials engineering
  • 3403 Macromolecular and materials chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Fournier, F., Metzger, R. A., Doolittle, A., Brown, A. S., Carter-Coman, C., Jokerst, N. M., & Bicknell-Tassius, R. (1997). Growth dynamics of InGaAs/GaAs by MBE. Journal of Crystal Growth, 175–176(PART 1), 203–210. https://doi.org/10.1016/S0022-0248(96)00888-3
Fournier, F., R. A. Metzger, A. Doolittle, A. S. Brown, C. Carter-Coman, N. M. Jokerst, and R. Bicknell-Tassius. “Growth dynamics of InGaAs/GaAs by MBE.” Journal of Crystal Growth 175–176, no. PART 1 (January 1, 1997): 203–10. https://doi.org/10.1016/S0022-0248(96)00888-3.
Fournier F, Metzger RA, Doolittle A, Brown AS, Carter-Coman C, Jokerst NM, et al. Growth dynamics of InGaAs/GaAs by MBE. Journal of Crystal Growth. 1997 Jan 1;175–176(PART 1):203–10.
Fournier, F., et al. “Growth dynamics of InGaAs/GaAs by MBE.” Journal of Crystal Growth, vol. 175–176, no. PART 1, Jan. 1997, pp. 203–10. Scopus, doi:10.1016/S0022-0248(96)00888-3.
Fournier F, Metzger RA, Doolittle A, Brown AS, Carter-Coman C, Jokerst NM, Bicknell-Tassius R. Growth dynamics of InGaAs/GaAs by MBE. Journal of Crystal Growth. 1997 Jan 1;175–176(PART 1):203–210.
Journal cover image

Published In

Journal of Crystal Growth

DOI

10.1016/S0022-0248(96)00888-3

ISSN

0022-0248

Publication Date

January 1, 1997

Volume

175-176

Issue

PART 1

Start / End Page

203 / 210

Related Subject Headings

  • Applied Physics
  • 4016 Materials engineering
  • 3403 Macromolecular and materials chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry