Surface oxide relationships to band bending in GaN
Publication
, Journal Article
Garcia, MA; Wolter, SD; Kim, T-H; Choi, S; Baier, J; Brown, A; Losurdo, M; Bruno, G
Published in: Appl. Phys. Lett. (USA)
2006
A trend of increased near-surface valence band maximum band bending with increasing O/Ga relative fraction was observed, extrapolating to 2.7 eV±0.1 eV for pristine GaN surfaces (0% O 1s peak area). This trend of apparent oxide overlayer coverage affecting the band bending linearly could lead to better understanding and characterization of oxidized GaN surfaces to control band bending for sensors or other devices
Duke Scholars
Published In
Appl. Phys. Lett. (USA)
DOI
Publication Date
2006
Volume
88
Issue
1
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Garcia, M. A., Wolter, S. D., Kim, T.-H., Choi, S., Baier, J., Brown, A., … Bruno, G. (2006). Surface oxide relationships to band bending in GaN. Appl. Phys. Lett. (USA), 88(1). https://doi.org/10.1063/1.2158701
Garcia, M. A., S. D. Wolter, Tong-Ho Kim, Soojeong Choi, J. Baier, A. Brown, M. Losurdo, and G. Bruno. “Surface oxide relationships to band bending in GaN.” Appl. Phys. Lett. (USA) 88, no. 1 (2006). https://doi.org/10.1063/1.2158701.
Garcia MA, Wolter SD, Kim T-H, Choi S, Baier J, Brown A, et al. Surface oxide relationships to band bending in GaN. Appl Phys Lett (USA). 2006;88(1).
Garcia, M. A., et al. “Surface oxide relationships to band bending in GaN.” Appl. Phys. Lett. (USA), vol. 88, no. 1, 2006. Manual, doi:10.1063/1.2158701.
Garcia MA, Wolter SD, Kim T-H, Choi S, Baier J, Brown A, Losurdo M, Bruno G. Surface oxide relationships to band bending in GaN. Appl Phys Lett (USA). 2006;88(1).
Published In
Appl. Phys. Lett. (USA)
DOI
Publication Date
2006
Volume
88
Issue
1
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences