Profile parameters of implanted-diffused arsenic layers in silicon
Publication
, Journal Article
Fair, RB; Tsai, JCC
Published in: J. Electrochem. Soc. (USA)
1976
Equations have been derived that describe the important profile variables that are required to characterize the diffusion of As implanted layers for which the surface concentration is greater than ~1×1019 cm-3. In addition, data obtained from differential conductivity profile measurements and SIMS profile measurements (Fair and Tsai, ibid., vol.122, p.1689 (1975)) have been used to obtain experimental parameters for these equations
Duke Scholars
Published In
J. Electrochem. Soc. (USA)
Publication Date
1976
Volume
123
Issue
4
Start / End Page
583 / 586
Related Subject Headings
- Energy
- 4016 Materials engineering
- 3406 Physical chemistry
- 0912 Materials Engineering
- 0306 Physical Chemistry (incl. Structural)
- 0303 Macromolecular and Materials Chemistry
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Fair, R. B., & Tsai, J. C. C. (1976). Profile parameters of implanted-diffused arsenic layers in silicon. J. Electrochem. Soc. (USA), 123(4), 583–586.
Fair, R. B., and J. C. C. Tsai. “Profile parameters of implanted-diffused arsenic layers in silicon.” J. Electrochem. Soc. (USA) 123, no. 4 (1976): 583–86.
Fair RB, Tsai JCC. Profile parameters of implanted-diffused arsenic layers in silicon. J Electrochem Soc (USA). 1976;123(4):583–6.
Fair, R. B., and J. C. C. Tsai. “Profile parameters of implanted-diffused arsenic layers in silicon.” J. Electrochem. Soc. (USA), vol. 123, no. 4, 1976, pp. 583–86.
Fair RB, Tsai JCC. Profile parameters of implanted-diffused arsenic layers in silicon. J Electrochem Soc (USA). 1976;123(4):583–586.
Published In
J. Electrochem. Soc. (USA)
Publication Date
1976
Volume
123
Issue
4
Start / End Page
583 / 586
Related Subject Headings
- Energy
- 4016 Materials engineering
- 3406 Physical chemistry
- 0912 Materials Engineering
- 0306 Physical Chemistry (incl. Structural)
- 0303 Macromolecular and Materials Chemistry