MODELING ANOMALOUS JUNCTION FORMATION IN SILICON BY THE CODIFFUSION OF IMPLANTED ARSENIC WITH PHOSPHORUS.
Publication
, Journal Article
Fair, RB; Meyer, WG
Published in: ASTM Special Technical Publication
December 1, 1983
Duke Scholars
Published In
ASTM Special Technical Publication
ISSN
1040-3094
Publication Date
December 1, 1983
Start / End Page
290 / 305
Related Subject Headings
- Mechanical Engineering & Transports
Citation
APA
Chicago
ICMJE
MLA
NLM
Fair, R. B., & Meyer, W. G. (1983). MODELING ANOMALOUS JUNCTION FORMATION IN SILICON BY THE CODIFFUSION OF IMPLANTED ARSENIC WITH PHOSPHORUS. ASTM Special Technical Publication, 290–305.
Fair, R. B., and W. G. Meyer. “MODELING ANOMALOUS JUNCTION FORMATION IN SILICON BY THE CODIFFUSION OF IMPLANTED ARSENIC WITH PHOSPHORUS.” ASTM Special Technical Publication, December 1, 1983, 290–305.
Fair RB, Meyer WG. MODELING ANOMALOUS JUNCTION FORMATION IN SILICON BY THE CODIFFUSION OF IMPLANTED ARSENIC WITH PHOSPHORUS. ASTM Special Technical Publication. 1983 Dec 1;290–305.
Fair, R. B., and W. G. Meyer. “MODELING ANOMALOUS JUNCTION FORMATION IN SILICON BY THE CODIFFUSION OF IMPLANTED ARSENIC WITH PHOSPHORUS.” ASTM Special Technical Publication, Dec. 1983, pp. 290–305.
Fair RB, Meyer WG. MODELING ANOMALOUS JUNCTION FORMATION IN SILICON BY THE CODIFFUSION OF IMPLANTED ARSENIC WITH PHOSPHORUS. ASTM Special Technical Publication. 1983 Dec 1;290–305.
Published In
ASTM Special Technical Publication
ISSN
1040-3094
Publication Date
December 1, 1983
Start / End Page
290 / 305
Related Subject Headings
- Mechanical Engineering & Transports