The role of vacancies and self-interstitials in impurity diffusion in silicon

Research in the areas of self-diffusion and dopant diffusion in Si has focused on the identification of the specific mechanisms and point defects involved. Recent approaches include the observation of the effects of diffusion and doping on stacking fault growth or shrinkage, enhanced or retarded diffusion of one dopant in the presence of another, and computer modelling. Very few of these studies have yielded unambiguous interpretations, due to the indirect nature of the investigations. However, it is now widely believed that both vacancies and Si self-interstitials play a role in diffusion processes, either directly or indirectly through bimolecular reactions with each other

Duke Scholars

Author Richard B. Fair Electrical and Computer Engineering