COMPUTER SIMULATION OF OXYGEN PRECIPITATION AND DENUDED ZONE FORMATION.

A computer model of oxygen-precipitate nucleation, growth and dissolution, and oxygen outdiffusion from a silicon wafer surface has been developed. The model assumes homogeneous nucleation and uses nucleation and growth expressions available in the literature. To simulate oxygen outdiffusion, thermally activated boundary conditions are used at the wafer surface. The thermal history of the as-grown ingot is considered in predicting precipitate densities and depths of denuded zones. The model provides insight into the importance of homogeneous nucleation and thermal history in the precipitation process and provides a framework for the incorporation of heterogeneous effects.

Duke Scholars

Author Richard B. Fair Electrical and Computer Engineering