Quantified Conditions for Emitter-Misfit Dislocation Formation in Silicon

The conditions under which misfit dislocations are generated during phosphorus diffusion in silicon are discussed. Van der Merwe's concept of critical misfit is used to determine the critical surface region depth for a given P surface concentration which causes spontaneous misfit dislocation formation. Using this model the times required to form misfit arrays are calculated as a function of temperature and surface concentration. The effect of misfit dislocation generation in an oxidizing ambient is also discussed. © 1978, The Electrochemical Society, Inc. All rights reserved.

Duke Scholars

Author Richard B. Fair Electrical and Computer Engineering