Diffusion and oxidation of silicon

Oxidation and diffusion in silicon are processes that significantly affect the fabrication of microelectronic devices. However, our knowledge of the fundamental principles governing these processes is inadequate, and this inadequacy affects our ability to understand and model submicrometer ultralarge-scale-integration technologies. These advanced processes require p-n junctions of 1000-angstrom depth and oxides of 100-angstrom thickness. The existing theories and models do not adequately describe the physical mechanisms that dominate diffusion and oxidation in these regimes. The theories, new ideas, issues, and unknowns about these processes are reviewed in this paper.

Duke Scholars

Author Richard B. Fair Electrical and Computer Engineering