Diffusion of Ion-Implanted B in High Concentration P- and As-Doped Silicon

The diffusion of ion-implanted B in Si in the presence of a uniform background of high concentration P or As has been studied by correlating numerical profile calculations with profiles determined by secondary-ion mass spectrometry (SIMS). Retarded B diffusion is observed in both As- and P-doped Si, consistent with the effect of the local Fermi-level position in the Si bandgap on B diffusivity, DB. It is shown that Db is linearly dependent on the free hole concentration, p, over the range 0.1 < p/nie < 30, where nie is the effective intrinsic electron concentration. This result does not depend on the way in which the background dopant has been introduced (implantation predeposition or doped-oxiae source), nor the type of dopant used (P or As). © 1975, The Electrochemical Society, Inc. All rights reserved.

Duke Scholars

Author Richard B. Fair Electrical and Computer Engineering