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Diffusion of Ion-Implanted B in High Concentration P- and As-Doped Silicon

Publication ,  Journal Article
Fair, RB; Pappas, PN
Published in: Journal of the Electrochemical Society
January 1, 1975

The diffusion of ion-implanted B in Si in the presence of a uniform background of high concentration P or As has been studied by correlating numerical profile calculations with profiles determined by secondary-ion mass spectrometry (SIMS). Retarded B diffusion is observed in both As- and P-doped Si, consistent with the effect of the local Fermi-level position in the Si bandgap on B diffusivity, DB. It is shown that Db is linearly dependent on the free hole concentration, p, over the range 0.1 < p/nie < 30, where nie is the effective intrinsic electron concentration. This result does not depend on the way in which the background dopant has been introduced (implantation predeposition or doped-oxiae source), nor the type of dopant used (P or As). © 1975, The Electrochemical Society, Inc. All rights reserved.

Duke Scholars

Published In

Journal of the Electrochemical Society

DOI

EISSN

1945-7111

ISSN

0013-4651

Publication Date

January 1, 1975

Volume

122

Issue

9

Start / End Page

1241 / 1244

Related Subject Headings

  • Energy
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry
 

Citation

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Fair, R. B., & Pappas, P. N. (1975). Diffusion of Ion-Implanted B in High Concentration P- and As-Doped Silicon. Journal of the Electrochemical Society, 122(9), 1241–1244. https://doi.org/10.1149/1.2134434
Fair, R. B., and P. N. Pappas. “Diffusion of Ion-Implanted B in High Concentration P- and As-Doped Silicon.” Journal of the Electrochemical Society 122, no. 9 (January 1, 1975): 1241–44. https://doi.org/10.1149/1.2134434.
Fair RB, Pappas PN. Diffusion of Ion-Implanted B in High Concentration P- and As-Doped Silicon. Journal of the Electrochemical Society. 1975 Jan 1;122(9):1241–4.
Fair, R. B., and P. N. Pappas. “Diffusion of Ion-Implanted B in High Concentration P- and As-Doped Silicon.” Journal of the Electrochemical Society, vol. 122, no. 9, Jan. 1975, pp. 1241–44. Scopus, doi:10.1149/1.2134434.
Fair RB, Pappas PN. Diffusion of Ion-Implanted B in High Concentration P- and As-Doped Silicon. Journal of the Electrochemical Society. 1975 Jan 1;122(9):1241–1244.

Published In

Journal of the Electrochemical Society

DOI

EISSN

1945-7111

ISSN

0013-4651

Publication Date

January 1, 1975

Volume

122

Issue

9

Start / End Page

1241 / 1244

Related Subject Headings

  • Energy
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry