CURVE FITTING MODELS FOR BORON, PHOSPHORUS AND ARSENIC ION IMPLANTATIONS IN CRYSTALLINE SILICON.
Publication
, Journal Article
Fair, RB; Cook, RC; Wortman, JJ
Published in: Electrochemical Society Extended Abstracts
January 1, 1985
A curve-fitting model has been developed to calculate as-implanted profiles for As, B and P ions implanted into crystalline silicon. In general, good agreement was shown to exist between the calculated profiles and the experimental profiles for specific implantation conditions. The sum of the Gaussian distribution and exponential distribution describes the profiles reasonably well.
Duke Scholars
Published In
Electrochemical Society Extended Abstracts
ISSN
0160-4619
Publication Date
January 1, 1985
Volume
85-1
Start / End Page
371 / 372
Citation
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MLA
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Fair, R. B., Cook, R. C., & Wortman, J. J. (1985). CURVE FITTING MODELS FOR BORON, PHOSPHORUS AND ARSENIC ION IMPLANTATIONS IN CRYSTALLINE SILICON. Electrochemical Society Extended Abstracts, 85–1, 371–372.
Fair, R. B., R. C. Cook, and J. J. Wortman. “CURVE FITTING MODELS FOR BORON, PHOSPHORUS AND ARSENIC ION IMPLANTATIONS IN CRYSTALLINE SILICON.” Electrochemical Society Extended Abstracts 85–1 (January 1, 1985): 371–72.
Fair RB, Cook RC, Wortman JJ. CURVE FITTING MODELS FOR BORON, PHOSPHORUS AND ARSENIC ION IMPLANTATIONS IN CRYSTALLINE SILICON. Electrochemical Society Extended Abstracts. 1985 Jan 1;85–1:371–2.
Fair, R. B., et al. “CURVE FITTING MODELS FOR BORON, PHOSPHORUS AND ARSENIC ION IMPLANTATIONS IN CRYSTALLINE SILICON.” Electrochemical Society Extended Abstracts, vol. 85–1, Jan. 1985, pp. 371–72.
Fair RB, Cook RC, Wortman JJ. CURVE FITTING MODELS FOR BORON, PHOSPHORUS AND ARSENIC ION IMPLANTATIONS IN CRYSTALLINE SILICON. Electrochemical Society Extended Abstracts. 1985 Jan 1;85–1:371–372.
Published In
Electrochemical Society Extended Abstracts
ISSN
0160-4619
Publication Date
January 1, 1985
Volume
85-1
Start / End Page
371 / 372