THRESHOLD-VOLTAGE INSTABILITY IN MOSFET's DUE TO CHANNEL HOT-HOLE EMISSION.
Hydrogen introduced and trapped in the gate oxide of MOSFET's by the silicon-nitride capping process can be activated by emitted holes from the MOSFET channel to produce a large threshold-voltage shift. This effect requires avalanche multiplication in the channel for the production of holes when a dc voltage is applied to the gate. For the pulsed-gate case, the magnitude of the threshold-voltage shift depends significantly on the gate-pulse fall time, cycle time, and duty cycle. In both cases the electric field normal to the Si/SiO//2 interface near the drain aids the emission of holes across that interface. A semiquantitative model is proposed which says that holes can recombine at H//2 molecules and release sufficient energy to cause dissociation.
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- 0906 Electrical and Electronic Engineering
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Published In
Publication Date
Volume
Issue
Start / End Page
Related Subject Headings
- Applied Physics
- 0906 Electrical and Electronic Engineering