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THRESHOLD-VOLTAGE INSTABILITY IN MOSFET's DUE TO CHANNEL HOT-HOLE EMISSION.

Publication ,  Journal Article
Fair, RB; Sun, RC
Published in: IEEE Transactions on Electron Devices
1981

Hydrogen introduced and trapped in the gate oxide of MOSFET's by the silicon-nitride capping process can be activated by emitted holes from the MOSFET channel to produce a large threshold-voltage shift. This effect requires avalanche multiplication in the channel for the production of holes when a dc voltage is applied to the gate. For the pulsed-gate case, the magnitude of the threshold-voltage shift depends significantly on the gate-pulse fall time, cycle time, and duty cycle. In both cases the electric field normal to the Si/SiO//2 interface near the drain aids the emission of holes across that interface. A semiquantitative model is proposed which says that holes can recombine at H//2 molecules and release sufficient energy to cause dissociation.

Duke Scholars

Published In

IEEE Transactions on Electron Devices

Publication Date

1981

Volume

ED-28

Issue

1

Start / End Page

83 / 94

Related Subject Headings

  • Applied Physics
  • 0906 Electrical and Electronic Engineering
 

Citation

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MLA
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Fair, R. B., & Sun, R. C. (1981). THRESHOLD-VOLTAGE INSTABILITY IN MOSFET's DUE TO CHANNEL HOT-HOLE EMISSION. IEEE Transactions on Electron Devices, ED-28(1), 83–94.
Fair, R. B., and R. C. Sun. “THRESHOLD-VOLTAGE INSTABILITY IN MOSFET's DUE TO CHANNEL HOT-HOLE EMISSION.IEEE Transactions on Electron Devices ED-28, no. 1 (1981): 83–94.
Fair RB, Sun RC. THRESHOLD-VOLTAGE INSTABILITY IN MOSFET's DUE TO CHANNEL HOT-HOLE EMISSION. IEEE Transactions on Electron Devices. 1981;ED-28(1):83–94.
Fair, R. B., and R. C. Sun. “THRESHOLD-VOLTAGE INSTABILITY IN MOSFET's DUE TO CHANNEL HOT-HOLE EMISSION.IEEE Transactions on Electron Devices, vol. ED-28, no. 1, 1981, pp. 83–94.
Fair RB, Sun RC. THRESHOLD-VOLTAGE INSTABILITY IN MOSFET's DUE TO CHANNEL HOT-HOLE EMISSION. IEEE Transactions on Electron Devices. 1981;ED-28(1):83–94.

Published In

IEEE Transactions on Electron Devices

Publication Date

1981

Volume

ED-28

Issue

1

Start / End Page

83 / 94

Related Subject Headings

  • Applied Physics
  • 0906 Electrical and Electronic Engineering