Thermal budget issues for deep submicron ULSI
Publication
, Journal Article
Fair, RB; Ruggles, GA
Published in: Solid State Technology
May 1, 1990
The thermal budget available for sub 0.5 μm silicon processing decreases rapidly due to implantation damage-assisted diffusion, which derives junctions deeper than desired. Thus current ion implantation technology may not be practical for scaled 0.25 μm MOS technology. Alternatives for junction formation are reviewed, and issues of oxide thickness control and related equipment considerations are discussed.
Duke Scholars
Published In
Solid State Technology
ISSN
0038-111X
Publication Date
May 1, 1990
Volume
33
Issue
5
Start / End Page
107 / 113
Related Subject Headings
- Applied Physics
- 0206 Quantum Physics
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Fair, R. B., & Ruggles, G. A. (1990). Thermal budget issues for deep submicron ULSI. Solid State Technology, 33(5), 107–113.
Fair, R. B., and G. A. Ruggles. “Thermal budget issues for deep submicron ULSI.” Solid State Technology 33, no. 5 (May 1, 1990): 107–13.
Fair RB, Ruggles GA. Thermal budget issues for deep submicron ULSI. Solid State Technology. 1990 May 1;33(5):107–13.
Fair, R. B., and G. A. Ruggles. “Thermal budget issues for deep submicron ULSI.” Solid State Technology, vol. 33, no. 5, May 1990, pp. 107–13.
Fair RB, Ruggles GA. Thermal budget issues for deep submicron ULSI. Solid State Technology. 1990 May 1;33(5):107–113.
Published In
Solid State Technology
ISSN
0038-111X
Publication Date
May 1, 1990
Volume
33
Issue
5
Start / End Page
107 / 113
Related Subject Headings
- Applied Physics
- 0206 Quantum Physics
- 0204 Condensed Matter Physics