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Thermal budget issues for deep submicron ULSI

Publication ,  Journal Article
Fair, RB; Ruggles, GA
Published in: Solid State Technology
May 1, 1990

The thermal budget available for sub 0.5 μm silicon processing decreases rapidly due to implantation damage-assisted diffusion, which derives junctions deeper than desired. Thus current ion implantation technology may not be practical for scaled 0.25 μm MOS technology. Alternatives for junction formation are reviewed, and issues of oxide thickness control and related equipment considerations are discussed.

Duke Scholars

Published In

Solid State Technology

ISSN

0038-111X

Publication Date

May 1, 1990

Volume

33

Issue

5

Start / End Page

107 / 113

Related Subject Headings

  • Applied Physics
  • 0206 Quantum Physics
  • 0204 Condensed Matter Physics
 

Citation

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MLA
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Fair, R. B., & Ruggles, G. A. (1990). Thermal budget issues for deep submicron ULSI. Solid State Technology, 33(5), 107–113.
Fair, R. B., and G. A. Ruggles. “Thermal budget issues for deep submicron ULSI.” Solid State Technology 33, no. 5 (May 1, 1990): 107–13.
Fair RB, Ruggles GA. Thermal budget issues for deep submicron ULSI. Solid State Technology. 1990 May 1;33(5):107–13.
Fair, R. B., and G. A. Ruggles. “Thermal budget issues for deep submicron ULSI.” Solid State Technology, vol. 33, no. 5, May 1990, pp. 107–13.
Fair RB, Ruggles GA. Thermal budget issues for deep submicron ULSI. Solid State Technology. 1990 May 1;33(5):107–113.

Published In

Solid State Technology

ISSN

0038-111X

Publication Date

May 1, 1990

Volume

33

Issue

5

Start / End Page

107 / 113

Related Subject Headings

  • Applied Physics
  • 0206 Quantum Physics
  • 0204 Condensed Matter Physics