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On the role of self-interstitials in impurity diffusion in silicon

Publication ,  Journal Article
Fair, RB
Published in: Journal of Applied Physics
December 1, 1980

The question of whether the monovacancy or the self-interstitial is the point defect responsible for impurity diffusion is reviewed in the light of buried marker diffusion experiments and irradiation-enhanced diffusion data. It is concluded that coupled vacancy-impurity diffusion is the preferred interpretation, but no definite conclusions can be drawn. However, the role of the self-interstitial in diffusion is proposed through a model which assumes that during oxidation, exchanges can take place between vacancies, self-interstitials, impurity interstitials, and substitutional impurities. By assuming a partial interstitialcy diffusion model it is shown that ?10-20% of the impurity flux during nonoxidizing diffusion conditions is due to impurity interstitials displaced by self-interstitials in equilibrium in the silicon. Calculations of impurity interstitial formation energies are consistent with the degree of oxidation enhanced diffusion measured for boron, phosphorus, and arsenic.

Duke Scholars

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1980

Volume

51

Issue

11

Start / End Page

5828 / 5832

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

Citation

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Fair, R. B. (1980). On the role of self-interstitials in impurity diffusion in silicon. Journal of Applied Physics, 51(11), 5828–5832. https://doi.org/10.1063/1.327540
Fair, R. B. “On the role of self-interstitials in impurity diffusion in silicon.” Journal of Applied Physics 51, no. 11 (December 1, 1980): 5828–32. https://doi.org/10.1063/1.327540.
Fair RB. On the role of self-interstitials in impurity diffusion in silicon. Journal of Applied Physics. 1980 Dec 1;51(11):5828–32.
Fair, R. B. “On the role of self-interstitials in impurity diffusion in silicon.” Journal of Applied Physics, vol. 51, no. 11, Dec. 1980, pp. 5828–32. Scopus, doi:10.1063/1.327540.
Fair RB. On the role of self-interstitials in impurity diffusion in silicon. Journal of Applied Physics. 1980 Dec 1;51(11):5828–5832.
Journal cover image

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1980

Volume

51

Issue

11

Start / End Page

5828 / 5832

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences