Comment on `The diffusion of antimony in heavily doped and (sic) n- and p-type silicon' [J. Mater. Res. 1, 705 (1986)]
R.B. Fair et al. have analyzed original data on the effect of heavy, uniform background doping with As and B on the diffusivity of Sb in Si at 1000°-1200°C. Their analysis attributed a role to `electric fields' and led to the conclusion that, for n-type background doping, Sb diffusion is dominated by double-negatively charged vacancies with no contribution from V-. For p-type backgrounds they concluded that donor-acceptor pairing alone retards the diffusion. Morehead shows (1) that electric fields do not play a role in their experiments, (2) that the contribution of V- to Sb diffusion in an n-type background is not zero but is roughly equal to that of V2- for n/ni=10, and (3) that the retardation of Sb diffusion in p-type Si is due both to donor-acceptor pairing and, principally, to the elimination of the contributions of V- and V2-
