Transistor design considerations for low-noise preamplifiers
Publication
, Journal Article
Fair, RB
Published in: IEEE Trans. Nucl. Sci. (USA)
1976
A review is presented of design considerations for GaAs Schottky-barrier FETs and other types of transistors in low-noise amplifiers for capacitive sources which are used in nuclear radiation detectors and high speed fiber-optic communication systems. Ultimate limits on performance are evaluated in terms of the gm/Ci ratio and the gate leakage current to minimize the noise sources. Si bipolar transistors and the future prospects of GaAs, Si and InAs MISFETs are discussed, and performance is compared to FETs currently being used in low-noise preamplifiers
Duke Scholars
Published In
IEEE Trans. Nucl. Sci. (USA)
Publication Date
1976
Volume
ns-23
Issue
1
Start / End Page
218 / 225
Location
San Francisco, CA, USA
Citation
APA
Chicago
ICMJE
MLA
NLM
Fair, R. B. (1976). Transistor design considerations for low-noise preamplifiers. IEEE Trans. Nucl. Sci. (USA), ns-23(1), 218–225.
Fair, R. B. “Transistor design considerations for low-noise preamplifiers.” IEEE Trans. Nucl. Sci. (USA) ns-23, no. 1 (1976): 218–25.
Fair RB. Transistor design considerations for low-noise preamplifiers. IEEE Trans Nucl Sci (USA). 1976;ns-23(1):218–25.
Fair, R. B. “Transistor design considerations for low-noise preamplifiers.” IEEE Trans. Nucl. Sci. (USA), vol. ns-23, no. 1, 1976, pp. 218–25.
Fair RB. Transistor design considerations for low-noise preamplifiers. IEEE Trans Nucl Sci (USA). 1976;ns-23(1):218–225.
Published In
IEEE Trans. Nucl. Sci. (USA)
Publication Date
1976
Volume
ns-23
Issue
1
Start / End Page
218 / 225
Location
San Francisco, CA, USA