Skip to main content

InAs-based p-n homojunction diodes: Doping effects and impact of doping on device parameters

Publication ,  Journal Article
Yi, C; Kim, T-H; Brown, AS
Published in: Journal of Electronic Materials
2006

InAs heterojunction bipolar transistors (HBTs) are promising candidates for low power and high frequency (THz) device applications due to their small bandgap, high electron mobility, and high saturation drift velocity. However, doping limits such as the trade-off between desired low intentional n-type concentrations and unintentional doping, and the realization of high p-type concentrations, must still be considered in device design and synthesis. In order to observe the impact of intentional and unintentional n-type doping on diode electrical properties, InAs-based homojunction diodes have been grown on InAs substrates by solid-source molecular beam epitaxy (SSMBE) and were subsequently fabricated and characterized.

Duke Scholars

Published In

Journal of Electronic Materials

Publication Date

2006

Volume

35

Issue

9

Start / End Page

1712 / 1714

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 1099 Other Technology
  • 0906 Electrical and Electronic Engineering
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Yi, C., Kim, T.-H., & Brown, A. S. (2006). InAs-based p-n homojunction diodes: Doping effects and impact of doping on device parameters. Journal of Electronic Materials, 35(9), 1712–1714.
Yi, Changhyun, Tong-Ho Kim, and April S. Brown. “InAs-based p-n homojunction diodes: Doping effects and impact of doping on device parameters.” Journal of Electronic Materials 35, no. 9 (2006): 1712–14.
Yi C, Kim T-H, Brown AS. InAs-based p-n homojunction diodes: Doping effects and impact of doping on device parameters. Journal of Electronic Materials. 2006;35(9):1712–4.
Yi, Changhyun, et al. “InAs-based p-n homojunction diodes: Doping effects and impact of doping on device parameters.” Journal of Electronic Materials, vol. 35, no. 9, 2006, pp. 1712–14.
Yi C, Kim T-H, Brown AS. InAs-based p-n homojunction diodes: Doping effects and impact of doping on device parameters. Journal of Electronic Materials. 2006;35(9):1712–1714.

Published In

Journal of Electronic Materials

Publication Date

2006

Volume

35

Issue

9

Start / End Page

1712 / 1714

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 1099 Other Technology
  • 0906 Electrical and Electronic Engineering
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics