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Configurations of misfit dislocations at interfaces of lattice-matched Ga0.5In0.5P/GaAs heterostructures

Publication ,  Journal Article
Wang, YQ; Wang, ZL; Brown, T; Brown, A; May, G
Published in: Applied Physics Letters
July 10, 2000
Published version (DOI)

A configuration of misfit dislocation dipoles is observed in a Ga0.5In0.5P heterostructure grown by solid-source molecular-beam epitaxy on GaAs. The dipole dislocations are mostly of 60° type, separated by ∼3.5 nm. The dislocations are not produced by conventional lattice mismatch, rather, they could be the result of lateral compositional modulation in the Ga0.5In0.5P epilayer. © 2000 American Institute of Physics.

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

Applied Physics Letters

DOI

10.1063/1.126931

ISSN

0003-6951

Publication Date

July 10, 2000

Volume

77

Issue

2

Start / End Page

223 / 225

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

APA
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ICMJE
MLA
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Wang, Y. Q., Wang, Z. L., Brown, T., Brown, A., & May, G. (2000). Configurations of misfit dislocations at interfaces of lattice-matched Ga0.5In0.5P/GaAs heterostructures. Applied Physics Letters, 77(2), 223–225. https://doi.org/10.1063/1.126931
Wang, Y. Q., Z. L. Wang, T. Brown, A. Brown, and G. May. “Configurations of misfit dislocations at interfaces of lattice-matched Ga0.5In0.5P/GaAs heterostructures.” Applied Physics Letters 77, no. 2 (July 10, 2000): 223–25. https://doi.org/10.1063/1.126931.
Wang YQ, Wang ZL, Brown T, Brown A, May G. Configurations of misfit dislocations at interfaces of lattice-matched Ga0.5In0.5P/GaAs heterostructures. Applied Physics Letters. 2000 Jul 10;77(2):223–5.
Wang, Y. Q., et al. “Configurations of misfit dislocations at interfaces of lattice-matched Ga0.5In0.5P/GaAs heterostructures.” Applied Physics Letters, vol. 77, no. 2, July 2000, pp. 223–25. Scopus, doi:10.1063/1.126931.
Wang YQ, Wang ZL, Brown T, Brown A, May G. Configurations of misfit dislocations at interfaces of lattice-matched Ga0.5In0.5P/GaAs heterostructures. Applied Physics Letters. 2000 Jul 10;77(2):223–225.

Published In

Applied Physics Letters

DOI

10.1063/1.126931

ISSN

0003-6951

Publication Date

July 10, 2000

Volume

77

Issue

2

Start / End Page

223 / 225

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences