InP-based HEMTs for the realization of ultra-high efficiency millimeterwave power amplifiers
Publication
, Journal Article
Matloubian, M; Larson, L; Brown, A; Jelloian, L; Nguyen, L; Lui, M; Liu, T; Brown, J; Thompson, M; Lam, W; Kurdoghlian, A; Rhodes, R ...
Published in: Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
December 1, 1993
The paper discusses efforts undertaken to find ways for the application of InP high electron mobility transistors. Electric properties of these devices are being improved to be comparable with that of the GaAs based PHEMTs in the critical area of power added efficiency and output power. Improvements were accompanied by developments in material growth, device design and fabrication. Future work on the technology will involve further improvements in breakdown voltage, device yield and reliability.
Duke Scholars
Published In
Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
Publication Date
December 1, 1993
Start / End Page
520 / 527
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Matloubian, M., Larson, L., Brown, A., Jelloian, L., Nguyen, L., Lui, M., … Pence, J. (1993). InP-based HEMTs for the realization of ultra-high efficiency millimeterwave power amplifiers. Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 520–527.
Matloubian, M., L. Larson, A. Brown, L. Jelloian, L. Nguyen, M. Lui, T. Liu, et al. “InP-based HEMTs for the realization of ultra-high efficiency millimeterwave power amplifiers.” Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, December 1, 1993, 520–27.
Matloubian M, Larson L, Brown A, Jelloian L, Nguyen L, Lui M, et al. InP-based HEMTs for the realization of ultra-high efficiency millimeterwave power amplifiers. Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. 1993 Dec 1;520–7.
Matloubian, M., et al. “InP-based HEMTs for the realization of ultra-high efficiency millimeterwave power amplifiers.” Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Dec. 1993, pp. 520–27.
Matloubian M, Larson L, Brown A, Jelloian L, Nguyen L, Lui M, Liu T, Brown J, Thompson M, Lam W, Kurdoghlian A, Rhodes R, Delaney M, Pence J. InP-based HEMTs for the realization of ultra-high efficiency millimeterwave power amplifiers. Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. 1993 Dec 1;520–527.
Published In
Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
Publication Date
December 1, 1993
Start / End Page
520 / 527