V-band high-efficiency high-power AlInAs/GaInAs/InP HEMTs
Publication
, Journal Article
Matloubian, M; Jelloian, LM; Brown, AS; Nguyen, LD; Larson, LE; Delaney, MJ; Thompson, MA; Rhodes, RA; Pence, JE
Published in: IEEE MTT-S International Microwave Symposium Digest
January 1, 1993
In this paper we report on the stage-of-the-art power performance of InP-based HEMTs at 59 GHz. Using a 448 μm wide HEMT with a gate-length of 0.15 μm, an output power of 155 mW with 4.9 dB gain, and power-added efficiency of 30.1% were obtained. By power combining two of these HEMTs we were able to achieve an output power of 288 mW with 3.6 dB gain and power-added efficiency of 20.4%. This is the highest output power reported with such a high-efficiency for InP-based HEMTs, and is comparable to the best results reported for AlGaAs/InGaAs on GaAs pseudomorphic HEMTs at this frequency.
Duke Scholars
Published In
IEEE MTT-S International Microwave Symposium Digest
ISSN
0149-645X
Publication Date
January 1, 1993
Volume
2
Start / End Page
535 / 537
Citation
APA
Chicago
ICMJE
MLA
NLM
Matloubian, M., Jelloian, L. M., Brown, A. S., Nguyen, L. D., Larson, L. E., Delaney, M. J., … Pence, J. E. (1993). V-band high-efficiency high-power AlInAs/GaInAs/InP HEMTs. IEEE MTT-S International Microwave Symposium Digest, 2, 535–537.
Matloubian, M., L. M. Jelloian, A. S. Brown, L. D. Nguyen, L. E. Larson, M. J. Delaney, M. A. Thompson, R. A. Rhodes, and J. E. Pence. “V-band high-efficiency high-power AlInAs/GaInAs/InP HEMTs.” IEEE MTT-S International Microwave Symposium Digest 2 (January 1, 1993): 535–37.
Matloubian M, Jelloian LM, Brown AS, Nguyen LD, Larson LE, Delaney MJ, et al. V-band high-efficiency high-power AlInAs/GaInAs/InP HEMTs. IEEE MTT-S International Microwave Symposium Digest. 1993 Jan 1;2:535–7.
Matloubian, M., et al. “V-band high-efficiency high-power AlInAs/GaInAs/InP HEMTs.” IEEE MTT-S International Microwave Symposium Digest, vol. 2, Jan. 1993, pp. 535–37.
Matloubian M, Jelloian LM, Brown AS, Nguyen LD, Larson LE, Delaney MJ, Thompson MA, Rhodes RA, Pence JE. V-band high-efficiency high-power AlInAs/GaInAs/InP HEMTs. IEEE MTT-S International Microwave Symposium Digest. 1993 Jan 1;2:535–537.
Published In
IEEE MTT-S International Microwave Symposium Digest
ISSN
0149-645X
Publication Date
January 1, 1993
Volume
2
Start / End Page
535 / 537