Reduced silicon movement in GaInAs/AlInAs HEMT structures with low temperature AlInAs spacers
Publication
, Journal Article
Brown, AS; Nguyen, LD; Metzger, RA; Matloubian, M; Schrnitz, AE; Lui, M; Wilson, RG; Henige, JA
Published in: Institute of Physics Conference Series
December 1, 1991
High electron mobility transistors fabricated from GaInAs/AlInAs modulation-doped structure currently exhibit the highest current gain cut-off frequency, highest maximum frequency of oscillation and lowest noise figure of any three terminal device. The data presented show that the degraded characteristics of the inverted modulation-doped interface, as compared with the normal AlInAs on GaInAs, result from the segregation of silicon in AlInAs. The authors have reduced the magnitude of these deleterious effects by growing a thin layer of AlInAs immediately following the doped region at significantly reduced substrate temperatures. The degree of silicon segregation as a fucntion of substrate temperature is discussed.also
Duke Scholars
Published In
Institute of Physics Conference Series
ISSN
0951-3248
Publication Date
December 1, 1991
Volume
120
Start / End Page
281 / 286
Citation
APA
Chicago
ICMJE
MLA
NLM
Brown, A. S., Nguyen, L. D., Metzger, R. A., Matloubian, M., Schrnitz, A. E., Lui, M., … Henige, J. A. (1991). Reduced silicon movement in GaInAs/AlInAs HEMT structures with low temperature AlInAs spacers. Institute of Physics Conference Series, 120, 281–286.
Brown, A. S., L. D. Nguyen, R. A. Metzger, M. Matloubian, A. E. Schrnitz, M. Lui, R. G. Wilson, and J. A. Henige. “Reduced silicon movement in GaInAs/AlInAs HEMT structures with low temperature AlInAs spacers.” Institute of Physics Conference Series 120 (December 1, 1991): 281–86.
Brown AS, Nguyen LD, Metzger RA, Matloubian M, Schrnitz AE, Lui M, et al. Reduced silicon movement in GaInAs/AlInAs HEMT structures with low temperature AlInAs spacers. Institute of Physics Conference Series. 1991 Dec 1;120:281–6.
Brown, A. S., et al. “Reduced silicon movement in GaInAs/AlInAs HEMT structures with low temperature AlInAs spacers.” Institute of Physics Conference Series, vol. 120, Dec. 1991, pp. 281–86.
Brown AS, Nguyen LD, Metzger RA, Matloubian M, Schrnitz AE, Lui M, Wilson RG, Henige JA. Reduced silicon movement in GaInAs/AlInAs HEMT structures with low temperature AlInAs spacers. Institute of Physics Conference Series. 1991 Dec 1;120:281–286.
Published In
Institute of Physics Conference Series
ISSN
0951-3248
Publication Date
December 1, 1991
Volume
120
Start / End Page
281 / 286