GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology
Publication
, Journal Article
Delaney, MJ; Chou, CS; Larson, LE; Jensen, JF; Deakin, DS; Brown, AS; Hooper, WW; Thompson, MA; McCray, LG; Rosenbaum, SE
Published in: Proceedings of the Custom Integrated Circuits Conference
December 1, 1989
High-performance digital integrated circuits have been fabricated for the first time with low-temperature buffer GaAs MESFET technology. The new materials structure eliminates sidegating and light sensitivity, and improves FET performance. Individual 0.2 μm gate length transistors have a gm of 600 mS/mm and an extrapolated fT of 80 GHz. Static SCFL frequency dividers fabricated in this technology exhibit a maximum clock rate of 22 GHz. © 1989 IEEE.
Duke Scholars
Published In
Proceedings of the Custom Integrated Circuits Conference
DOI
ISSN
0886-5930
Publication Date
December 1, 1989
Citation
APA
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ICMJE
MLA
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Delaney, M. J., Chou, C. S., Larson, L. E., Jensen, J. F., Deakin, D. S., Brown, A. S., … Rosenbaum, S. E. (1989). GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology. Proceedings of the Custom Integrated Circuits Conference. https://doi.org/10.1109/CICC.1989.56782
Delaney, M. J., C. S. Chou, L. E. Larson, J. F. Jensen, D. S. Deakin, A. S. Brown, W. W. Hooper, M. A. Thompson, L. G. McCray, and S. E. Rosenbaum. “GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology.” Proceedings of the Custom Integrated Circuits Conference, December 1, 1989. https://doi.org/10.1109/CICC.1989.56782.
Delaney MJ, Chou CS, Larson LE, Jensen JF, Deakin DS, Brown AS, et al. GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology. Proceedings of the Custom Integrated Circuits Conference. 1989 Dec 1;
Delaney, M. J., et al. “GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology.” Proceedings of the Custom Integrated Circuits Conference, Dec. 1989. Scopus, doi:10.1109/CICC.1989.56782.
Delaney MJ, Chou CS, Larson LE, Jensen JF, Deakin DS, Brown AS, Hooper WW, Thompson MA, McCray LG, Rosenbaum SE. GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology. Proceedings of the Custom Integrated Circuits Conference. 1989 Dec 1;
Published In
Proceedings of the Custom Integrated Circuits Conference
DOI
ISSN
0886-5930
Publication Date
December 1, 1989