MBE GROWN GaAs MESFETS WITH ULTRA-HIGH G//M AND F//T.
Publication
, Journal Article
Mishra, UK; Beaubien, RS; Delaney, MJ; Brown, AS; Hackett, LH
Published in: Technical Digest - International Electron Devices Meeting
December 1, 1986
The authors report on the design, fabrication, and test performance of GaAs MESFETs with 0. 1- mu m gate length. The devices were fabricated on epitaxial material grown by molecular beam epitaxy (MBE) on a Riber 2300 system. The mean features of the design are discussed.
Duke Scholars
Published In
Technical Digest - International Electron Devices Meeting
ISSN
0163-1918
Publication Date
December 1, 1986
Start / End Page
829 / 831
Citation
APA
Chicago
ICMJE
MLA
NLM
Mishra, U. K., Beaubien, R. S., Delaney, M. J., Brown, A. S., & Hackett, L. H. (1986). MBE GROWN GaAs MESFETS WITH ULTRA-HIGH G//M AND F//T. Technical Digest - International Electron Devices Meeting, 829–831.
Mishra, U. K., R. S. Beaubien, M. J. Delaney, A. S. Brown, and L. H. Hackett. “MBE GROWN GaAs MESFETS WITH ULTRA-HIGH G//M AND F//T.” Technical Digest - International Electron Devices Meeting, December 1, 1986, 829–31.
Mishra UK, Beaubien RS, Delaney MJ, Brown AS, Hackett LH. MBE GROWN GaAs MESFETS WITH ULTRA-HIGH G//M AND F//T. Technical Digest - International Electron Devices Meeting. 1986 Dec 1;829–31.
Mishra, U. K., et al. “MBE GROWN GaAs MESFETS WITH ULTRA-HIGH G//M AND F//T.” Technical Digest - International Electron Devices Meeting, Dec. 1986, pp. 829–31.
Mishra UK, Beaubien RS, Delaney MJ, Brown AS, Hackett LH. MBE GROWN GaAs MESFETS WITH ULTRA-HIGH G//M AND F//T. Technical Digest - International Electron Devices Meeting. 1986 Dec 1;829–831.
Published In
Technical Digest - International Electron Devices Meeting
ISSN
0163-1918
Publication Date
December 1, 1986
Start / End Page
829 / 831