DEPLETION- AND ENHANCEMENT-MODE Al//0//. //4//8In//0//. //5//2As/Ga//0//. //4//7In//0//. //5//3As MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH A RECESSED GATE STRUCTURE.

Depletion- and enhancement-mode Al//0//. //4//8In//0//. //5//2As/Ga//0//. //4//7In//0//. //5//3As modulation doped field effect transistors with 1 mu m gate length have been successfully fabricated by employing a recessed gate structure and an undoped Al//0//. //4//8In//0//. //5//2As top layer beneath the gate metal. The fabricated devices exhibited good DC characteristics with a high transconductance and a complete pinch-off characteristic. For both depletion- and enhancement-mode devices, the transconductances of 250 mS/mm and 300 mS/mm have been measured at 300 K and 77 K, respectively.

Duke Scholars

Author April S. Brown Electrical and Computer Engineering