COMPUTER SIMULATION OF OXYGEN PRECIPITATION AND DENUDED ZONE FORMATION.

As both the adverse and the beneficial effects of oxygen in Czochralski grown silicon become clear, the need to precisely control its behavior is apparent. Of great utility to the wafer processing engineer would be a quantitative means to predict oxygen precipitate densities and denuded zone widths as a function of processing conditions. In an attempt to perform such an analysis, a computer model of oxygen precipitate nucleation, growth and dissolution, and oxygen outdiffusion from a silicon wafer surface has been constructed. The model assumes homogeneous nucleation and growth and attempts to incorporate the thermal history of the ingot into its predictions of precipitate densities and denuded zone widths.

Duke Scholars

Author Richard B. Fair Electrical and Computer Engineering